JPS5749218A - Heat treating apparatus - Google Patents

Heat treating apparatus

Info

Publication number
JPS5749218A
JPS5749218A JP12571380A JP12571380A JPS5749218A JP S5749218 A JPS5749218 A JP S5749218A JP 12571380 A JP12571380 A JP 12571380A JP 12571380 A JP12571380 A JP 12571380A JP S5749218 A JPS5749218 A JP S5749218A
Authority
JP
Japan
Prior art keywords
tube
liquid
gases
inlet
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12571380A
Other languages
Japanese (ja)
Inventor
Yutaka Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12571380A priority Critical patent/JPS5749218A/en
Publication of JPS5749218A publication Critical patent/JPS5749218A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To avoid the leakage of toxic and detrimental gases by providing a liquid tank which contains liquid for absorbing these gases to an exhaust tube connecting a process tube with a vacuum pump forming a heat treating apparatus. CONSTITUTION:A cap 4a is covered on the opening end of a process tube 1 having a gas inlet in the vicinity of an open end, and a fine tube 7 is connected to the other end. Then, wafers are aligned and placed on a boat 3, which is contained in the tube 1, the prescribed gas is fed from the inlet 5 through a tube 7 while heating them by a heater 2 provided on the outer periphery of the tube 1, and is evacuated by a vacuum pump 10. With this construction a liquid tank 9 which contains liquid, e.g., water for absorbing toxic and detrimental gases branched on the way of the tube 7 is provided, and liquid level position detecting sensor 91, a liquid inlet 92, a liquid outlet 93 and a check valve 94 are provided therein. Thus, the exhaust gases are all passed through the liquid in the tank 9 to remove the remaining gases, e.g., HCl, PH3, etc. and are then externally exhausted from the outlet 6.
JP12571380A 1980-09-08 1980-09-08 Heat treating apparatus Pending JPS5749218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12571380A JPS5749218A (en) 1980-09-08 1980-09-08 Heat treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12571380A JPS5749218A (en) 1980-09-08 1980-09-08 Heat treating apparatus

Publications (1)

Publication Number Publication Date
JPS5749218A true JPS5749218A (en) 1982-03-23

Family

ID=14916897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12571380A Pending JPS5749218A (en) 1980-09-08 1980-09-08 Heat treating apparatus

Country Status (1)

Country Link
JP (1) JPS5749218A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007272010A (en) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp Manufacturing method for liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007272010A (en) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp Manufacturing method for liquid crystal display device

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