JPS5745949A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5745949A JPS5745949A JP12156980A JP12156980A JPS5745949A JP S5745949 A JPS5745949 A JP S5745949A JP 12156980 A JP12156980 A JP 12156980A JP 12156980 A JP12156980 A JP 12156980A JP S5745949 A JPS5745949 A JP S5745949A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- mask
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To perform the microminiaturization of an aluminum wire and the flattening of the aluminum surface by forming a wiring pattern with the groove of Al buried insulating layer and forming an anode oxidized film on the aluminum surface as a mask. CONSTITUTION:A PSG5 on an Si substrate 1 is ion milled to form a fine groove 6, aluminums 7, 7' are sputtered, and are covered with anode oxidized films 8, 8'. A resist mask 9 is selectively formed at the groove 6, the aluminum layer 7' is removed with fluoric acid solution, and further the PSG5 and the resist 9 are ion milled to expose the film 8. The etching speed of the film 8 is 1/5 of aluminum as mask, thereby preventing the overetching. When the PSG10 is again eventually grown, a flat insulating layer 10 is obtained on the flat aluminum wire layer 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156980A JPS5745949A (en) | 1980-09-02 | 1980-09-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156980A JPS5745949A (en) | 1980-09-02 | 1980-09-02 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5745949A true JPS5745949A (en) | 1982-03-16 |
JPS6258543B2 JPS6258543B2 (en) | 1987-12-07 |
Family
ID=14814471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12156980A Granted JPS5745949A (en) | 1980-09-02 | 1980-09-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745949A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5295605A (en) * | 1989-10-25 | 1994-03-22 | Miura Research Co. | Shutter device for pressure container |
-
1980
- 1980-09-02 JP JP12156980A patent/JPS5745949A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5295605A (en) * | 1989-10-25 | 1994-03-22 | Miura Research Co. | Shutter device for pressure container |
Also Published As
Publication number | Publication date |
---|---|
JPS6258543B2 (en) | 1987-12-07 |
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