JPS5745270A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5745270A
JPS5745270A JP55120370A JP12037080A JPS5745270A JP S5745270 A JPS5745270 A JP S5745270A JP 55120370 A JP55120370 A JP 55120370A JP 12037080 A JP12037080 A JP 12037080A JP S5745270 A JPS5745270 A JP S5745270A
Authority
JP
Japan
Prior art keywords
receiving element
light receiving
chip
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55120370A
Other languages
Japanese (ja)
Other versions
JPS6262475B2 (en
Inventor
Yoshihiro Miyamoto
Toru Maekawa
Toshiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55120370A priority Critical patent/JPS5745270A/en
Publication of JPS5745270A publication Critical patent/JPS5745270A/en
Publication of JPS6262475B2 publication Critical patent/JPS6262475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the semiconductor device with small occupied space by forming a circuit element to a region, from which a light receiving element corresponding region is removed, of a semiconductor integrated circuit chip and making incident light incident to a light receiving element through the light receiving element corresponding region of said chip. CONSTITUTION:When the incident light 15 with a long-wave length is irradiated to the light receiving element corresponding region 9 of a semiconductor integrated circuit chip 8 through an optical lens 14, the incident light 15 transmits through the light receiving element corresponding region 9 which does not shape the circuit element of the semiconductor integrated circuit chip 8 in Si because the chip in Si, Ge, etc. is tranparaent to light with a 2mum or longer long-wave length, and the incident light enters the light receiving element on the surface of the semiconductor chip 1. Accordingly, since the circuit element is formed to the region, from which the light receiving element corresponding region 9 is removed, of the semiconductor integrated circuit chip 8, a semiconductor chip 1 and the semiconductor integrated circuit chip 8 are integrally constituted without a bonding wire.
JP55120370A 1980-08-29 1980-08-29 Semiconductor device Granted JPS5745270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120370A JPS5745270A (en) 1980-08-29 1980-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120370A JPS5745270A (en) 1980-08-29 1980-08-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745270A true JPS5745270A (en) 1982-03-15
JPS6262475B2 JPS6262475B2 (en) 1987-12-26

Family

ID=14784514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120370A Granted JPS5745270A (en) 1980-08-29 1980-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745270A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6217155U (en) * 1985-07-15 1987-02-02
US4766516A (en) * 1987-09-24 1988-08-23 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
JPH0226080A (en) * 1988-07-14 1990-01-29 Olympus Optical Co Ltd Semiconductor device
US7831152B2 (en) 2002-06-04 2010-11-09 Finisar Corporation Optical transceiver

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6217155U (en) * 1985-07-15 1987-02-02
US4766516A (en) * 1987-09-24 1988-08-23 Hughes Aircraft Company Method and apparatus for securing integrated circuits from unauthorized copying and use
JPH0226080A (en) * 1988-07-14 1990-01-29 Olympus Optical Co Ltd Semiconductor device
US7831152B2 (en) 2002-06-04 2010-11-09 Finisar Corporation Optical transceiver

Also Published As

Publication number Publication date
JPS6262475B2 (en) 1987-12-26

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