JPS5738548A - X-ray generator device - Google Patents
X-ray generator deviceInfo
- Publication number
- JPS5738548A JPS5738548A JP11502480A JP11502480A JPS5738548A JP S5738548 A JPS5738548 A JP S5738548A JP 11502480 A JP11502480 A JP 11502480A JP 11502480 A JP11502480 A JP 11502480A JP S5738548 A JPS5738548 A JP S5738548A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- target
- metal substrate
- rays
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/10—Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent evaporation of diamond and use it as a stable X-ray source with high brightness by imbedding a diamond target in a metal substrate material, water-cooling and rotating the metal substrate, irradiating electron rays on its surface, and generating X rays. CONSTITUTION:A diamond 2 is imbedded in the copper metal substrate material of a water cooling copper target 1 by the powder sintering method and the diamond content copper target 1 is formed. An axis of revolution 3 is mounted on this target 1 and arranged in a vacuum chamber 8 so as to rotate. Then water cooling inlet 4 and outlet 5 are mounted on the axis of revolutin 3, water-cooled, and revolved. An electron ray 6 is irradiated on the surface and X rays are generated. As a result, the thermal conduction of the diamond can be improved and a stable X-ray source be obtained with high brightness without any damages caused by the evaporation of the diamond.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502480A JPS5738548A (en) | 1980-08-21 | 1980-08-21 | X-ray generator device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11502480A JPS5738548A (en) | 1980-08-21 | 1980-08-21 | X-ray generator device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5738548A true JPS5738548A (en) | 1982-03-03 |
Family
ID=14652336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11502480A Pending JPS5738548A (en) | 1980-08-21 | 1980-08-21 | X-ray generator device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5738548A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246963A (en) * | 1985-08-27 | 1987-02-28 | 帝人株式会社 | Manufacture of silicon carbide sintered body |
JPH0211635A (en) * | 1988-04-07 | 1990-01-16 | Wacker Chemie Gmbh | Organopolysilane, protective film, sic-fiber and production of porous sic ceramic |
EP0697712A1 (en) * | 1994-08-20 | 1996-02-21 | Sumitomo Electric Industries, Ltd. | An X-ray generation apparatus |
US5508363A (en) * | 1987-01-28 | 1996-04-16 | Mitsui Toatsu Chemicals, Incorporated | Preparation process of organosilicon compounds and production of silicon carbide |
US5620934A (en) * | 1987-01-28 | 1997-04-15 | Mitsui Toatsu Chemicals, Incorporated | Production process of silicon carbide from organosilicon compounds |
US5878110A (en) * | 1994-08-20 | 1999-03-02 | Sumitomo Electric Industries, Ltd. | X-ray generation apparatus |
-
1980
- 1980-08-21 JP JP11502480A patent/JPS5738548A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246963A (en) * | 1985-08-27 | 1987-02-28 | 帝人株式会社 | Manufacture of silicon carbide sintered body |
US5508363A (en) * | 1987-01-28 | 1996-04-16 | Mitsui Toatsu Chemicals, Incorporated | Preparation process of organosilicon compounds and production of silicon carbide |
US5620934A (en) * | 1987-01-28 | 1997-04-15 | Mitsui Toatsu Chemicals, Incorporated | Production process of silicon carbide from organosilicon compounds |
JPH0211635A (en) * | 1988-04-07 | 1990-01-16 | Wacker Chemie Gmbh | Organopolysilane, protective film, sic-fiber and production of porous sic ceramic |
EP0697712A1 (en) * | 1994-08-20 | 1996-02-21 | Sumitomo Electric Industries, Ltd. | An X-ray generation apparatus |
US5657365A (en) * | 1994-08-20 | 1997-08-12 | Sumitomo Electric Industries, Ltd. | X-ray generation apparatus |
US5878110A (en) * | 1994-08-20 | 1999-03-02 | Sumitomo Electric Industries, Ltd. | X-ray generation apparatus |
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