JPS5738548A - X-ray generator device - Google Patents

X-ray generator device

Info

Publication number
JPS5738548A
JPS5738548A JP11502480A JP11502480A JPS5738548A JP S5738548 A JPS5738548 A JP S5738548A JP 11502480 A JP11502480 A JP 11502480A JP 11502480 A JP11502480 A JP 11502480A JP S5738548 A JPS5738548 A JP S5738548A
Authority
JP
Japan
Prior art keywords
diamond
target
metal substrate
rays
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11502480A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11502480A priority Critical patent/JPS5738548A/en
Publication of JPS5738548A publication Critical patent/JPS5738548A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/10—Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent evaporation of diamond and use it as a stable X-ray source with high brightness by imbedding a diamond target in a metal substrate material, water-cooling and rotating the metal substrate, irradiating electron rays on its surface, and generating X rays. CONSTITUTION:A diamond 2 is imbedded in the copper metal substrate material of a water cooling copper target 1 by the powder sintering method and the diamond content copper target 1 is formed. An axis of revolution 3 is mounted on this target 1 and arranged in a vacuum chamber 8 so as to rotate. Then water cooling inlet 4 and outlet 5 are mounted on the axis of revolutin 3, water-cooled, and revolved. An electron ray 6 is irradiated on the surface and X rays are generated. As a result, the thermal conduction of the diamond can be improved and a stable X-ray source be obtained with high brightness without any damages caused by the evaporation of the diamond.
JP11502480A 1980-08-21 1980-08-21 X-ray generator device Pending JPS5738548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11502480A JPS5738548A (en) 1980-08-21 1980-08-21 X-ray generator device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11502480A JPS5738548A (en) 1980-08-21 1980-08-21 X-ray generator device

Publications (1)

Publication Number Publication Date
JPS5738548A true JPS5738548A (en) 1982-03-03

Family

ID=14652336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11502480A Pending JPS5738548A (en) 1980-08-21 1980-08-21 X-ray generator device

Country Status (1)

Country Link
JP (1) JPS5738548A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246963A (en) * 1985-08-27 1987-02-28 帝人株式会社 Manufacture of silicon carbide sintered body
JPH0211635A (en) * 1988-04-07 1990-01-16 Wacker Chemie Gmbh Organopolysilane, protective film, sic-fiber and production of porous sic ceramic
EP0697712A1 (en) * 1994-08-20 1996-02-21 Sumitomo Electric Industries, Ltd. An X-ray generation apparatus
US5508363A (en) * 1987-01-28 1996-04-16 Mitsui Toatsu Chemicals, Incorporated Preparation process of organosilicon compounds and production of silicon carbide
US5620934A (en) * 1987-01-28 1997-04-15 Mitsui Toatsu Chemicals, Incorporated Production process of silicon carbide from organosilicon compounds
US5878110A (en) * 1994-08-20 1999-03-02 Sumitomo Electric Industries, Ltd. X-ray generation apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246963A (en) * 1985-08-27 1987-02-28 帝人株式会社 Manufacture of silicon carbide sintered body
US5508363A (en) * 1987-01-28 1996-04-16 Mitsui Toatsu Chemicals, Incorporated Preparation process of organosilicon compounds and production of silicon carbide
US5620934A (en) * 1987-01-28 1997-04-15 Mitsui Toatsu Chemicals, Incorporated Production process of silicon carbide from organosilicon compounds
JPH0211635A (en) * 1988-04-07 1990-01-16 Wacker Chemie Gmbh Organopolysilane, protective film, sic-fiber and production of porous sic ceramic
EP0697712A1 (en) * 1994-08-20 1996-02-21 Sumitomo Electric Industries, Ltd. An X-ray generation apparatus
US5657365A (en) * 1994-08-20 1997-08-12 Sumitomo Electric Industries, Ltd. X-ray generation apparatus
US5878110A (en) * 1994-08-20 1999-03-02 Sumitomo Electric Industries, Ltd. X-ray generation apparatus

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