JPS5738400A - Growing method for gallium-phosphorus semiconductor crystal - Google Patents
Growing method for gallium-phosphorus semiconductor crystalInfo
- Publication number
- JPS5738400A JPS5738400A JP11501580A JP11501580A JPS5738400A JP S5738400 A JPS5738400 A JP S5738400A JP 11501580 A JP11501580 A JP 11501580A JP 11501580 A JP11501580 A JP 11501580A JP S5738400 A JPS5738400 A JP S5738400A
- Authority
- JP
- Japan
- Prior art keywords
- gap
- melt
- crystal
- single crystal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To manufacture a large-sized GaP single crystal at high speed by controlling the area ratio of the surface of a Ga melt to the growing surface of a GaP crystal and the temp. gradient between the surfaces to specified values in the manufacture of a GaP single crystal by an SSD method.
CONSTITUTION: Red phosphorus 5 is put in the lower part of a container 4, and a quartz crucible 1 is set at the upper part. A GaP seed crystal 2 and a graphite plate 10 as a cooling body are placed at the bottom of the crucible 1, and a Ga melt 3 is charged in the crucible 1. The red phosphorus 5 is heated with a heater 6, and generated P vapor is reacted with the surface of the Ga melt 3 to form GaP. This GaP is diffused in the melt 3 toward the seed crystal 2 to grow a GaP single crystal 9 on the crystal 2. At this time, by controlling the ratio of the area S1 of the surface of the Ga melt 3 to the area S2 of the growing surface of the GaP crystal to S1/S2= 1/1.7W1/5 and the average temp. gradient between the surface of the melt 3 and the growing surface to 15W40°C/cm, the large-sized GaP single crystal 9 is grown at high speed.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11501580A JPS6041040B2 (en) | 1980-08-20 | 1980-08-20 | How to grow gallium phosphide semiconductor crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11501580A JPS6041040B2 (en) | 1980-08-20 | 1980-08-20 | How to grow gallium phosphide semiconductor crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5738400A true JPS5738400A (en) | 1982-03-03 |
JPS6041040B2 JPS6041040B2 (en) | 1985-09-13 |
Family
ID=14652142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11501580A Expired JPS6041040B2 (en) | 1980-08-20 | 1980-08-20 | How to grow gallium phosphide semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6041040B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61199318U (en) * | 1985-06-03 | 1986-12-13 |
-
1980
- 1980-08-20 JP JP11501580A patent/JPS6041040B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61199318U (en) * | 1985-06-03 | 1986-12-13 | ||
JPH0413050Y2 (en) * | 1985-06-03 | 1992-03-27 |
Also Published As
Publication number | Publication date |
---|---|
JPS6041040B2 (en) | 1985-09-13 |
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