JPS5737893A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5737893A
JPS5737893A JP11432480A JP11432480A JPS5737893A JP S5737893 A JPS5737893 A JP S5737893A JP 11432480 A JP11432480 A JP 11432480A JP 11432480 A JP11432480 A JP 11432480A JP S5737893 A JPS5737893 A JP S5737893A
Authority
JP
Japan
Prior art keywords
wavelength
laser
grid
diffraction grid
diffraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11432480A
Other languages
Japanese (ja)
Other versions
JPS6156635B2 (en
Inventor
Noriaki Tsukada
Takashi Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11432480A priority Critical patent/JPS5737893A/en
Publication of JPS5737893A publication Critical patent/JPS5737893A/en
Publication of JPS6156635B2 publication Critical patent/JPS6156635B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To maintain the oscillation wavelength constant by compensating for temperature changes depending on the interval of a diffraction grid with the feed back of an electrical signal to the grid corresponding to the deviation in the oscillation wavelength of a laser. CONSTITUTION:A laser beam is radiated from a laser which is adapted to selectively reflect light with by means of a diffraction grid 3 attached to an output guide wave path 2 of a low loss outside a laser activated layer as confined to the wavelength determined by the interval A of the grid. The reflected light is made parallel with a collimation lens 4 and reflected with a mirror 5 to be guided to the spectrometric diffraction grid 6, which diffracts the light in the direction corresponding to the wavelength thereof so that it is focused on a division line of a double split light detector 8 with a lens 7. When the wavelength of the laser is deviated from a specified value, the diffraction direction by the diffraction grid 6 changes causing a difference between two outputs of the detector. The differential output is amplified 9 differntially and after amplified 10 in the voltage, is fed back to an electrode 11 on a diffraction grid for distributory feed back whereby the cycle of the diffraction grid 8 is adjusted to a specified wavelength. This always provide a laser with a constant wavelength regardless of temperature changes.
JP11432480A 1980-08-18 1980-08-18 Semiconductor laser Granted JPS5737893A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11432480A JPS5737893A (en) 1980-08-18 1980-08-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11432480A JPS5737893A (en) 1980-08-18 1980-08-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5737893A true JPS5737893A (en) 1982-03-02
JPS6156635B2 JPS6156635B2 (en) 1986-12-03

Family

ID=14634976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11432480A Granted JPS5737893A (en) 1980-08-18 1980-08-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5737893A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923303A (en) * 1982-07-29 1984-02-06 Nec Corp Composite optical integrated device
JPS60133777A (en) * 1983-12-22 1985-07-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
JPS60222945A (en) * 1984-04-20 1985-11-07 Fuji Electric Co Ltd Backup system for abnormality or the like
JPS62101260U (en) * 1985-12-13 1987-06-27
JPS62189408A (en) * 1986-02-17 1987-08-19 Hitachi Ltd Optical integrated circuit
JPH0414274A (en) * 1990-05-07 1992-01-20 Matsushita Electric Ind Co Ltd Stabilized wavelength laser equipment
WO1998043327A3 (en) * 1997-03-26 1998-12-23 Siemens Ag Method for stabilizing the wavelength of a laser and arrangement for implementing said method
GB2382461A (en) * 2001-11-27 2003-05-28 Denselight Semiconductors Pte A coolerless fixed wavelength laser diode
EP1322006A1 (en) * 2001-12-21 2003-06-25 Agilent Technologies, Inc. (a Delaware corporation) Apparatus for detecting wavelength drift and method therefor
JP2008544530A (en) * 2005-06-30 2008-12-04 インテル・コーポレーション Integrated monitoring and feedback design of external cavity tunable lasers

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923303A (en) * 1982-07-29 1984-02-06 Nec Corp Composite optical integrated device
JPS60133777A (en) * 1983-12-22 1985-07-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device
JPS60222945A (en) * 1984-04-20 1985-11-07 Fuji Electric Co Ltd Backup system for abnormality or the like
JPH0319978B2 (en) * 1984-04-20 1991-03-18 Fuji Denki Kk
JPS62101260U (en) * 1985-12-13 1987-06-27
JPS62189408A (en) * 1986-02-17 1987-08-19 Hitachi Ltd Optical integrated circuit
JPH0414274A (en) * 1990-05-07 1992-01-20 Matsushita Electric Ind Co Ltd Stabilized wavelength laser equipment
WO1998043327A3 (en) * 1997-03-26 1998-12-23 Siemens Ag Method for stabilizing the wavelength of a laser and arrangement for implementing said method
GB2382461A (en) * 2001-11-27 2003-05-28 Denselight Semiconductors Pte A coolerless fixed wavelength laser diode
EP1322006A1 (en) * 2001-12-21 2003-06-25 Agilent Technologies, Inc. (a Delaware corporation) Apparatus for detecting wavelength drift and method therefor
US6919963B2 (en) 2001-12-21 2005-07-19 Agilent Technologies, Inc. Apparatus for detecting wavelength drift and method therefor
JP2008544530A (en) * 2005-06-30 2008-12-04 インテル・コーポレーション Integrated monitoring and feedback design of external cavity tunable lasers

Also Published As

Publication number Publication date
JPS6156635B2 (en) 1986-12-03

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