JPS5735393A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5735393A JPS5735393A JP11196580A JP11196580A JPS5735393A JP S5735393 A JPS5735393 A JP S5735393A JP 11196580 A JP11196580 A JP 11196580A JP 11196580 A JP11196580 A JP 11196580A JP S5735393 A JPS5735393 A JP S5735393A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- semiconductor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To make a semiconductor laser device to generate no reactive current and to contrive to reduce the threshold current thereof by a method wherein when the necessary semiconductor layers are to be formed in order on a semiconductor substrate, a transparent N type semiconductor layer is formed between the substrate and a P type semiconductor layer to be jointed to the substrate. CONSTITUTION:A P type GaAlAs layer 102, an N type GaAl layer 103, an N type GaAs active layer 104, and an N type GaAlAs layer 105 are made to grow in order on an I type GaAs substrate 101 by the liquid phase epitaxial growth technique, etc. At this time, an N type GaAlAs layer 301 is formed between the substrate 101 and the P type layer 102, and the forbidden band gap of the N type layer 301 is made as broader than that of the active layer 104 as to become transparent to radiation of an active region 111 Therefore because excitation of a pair of electron and hole to be caused by absorption of light in a degenerated layer 112 is not generated, the Fermi level of the N type layer 301 is held at a constant, and a PN hetero junction 302 performs current blocking function. Accordingly the reactive current A is not generated, and reduction of the threshold current can be attained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11196580A JPS5735393A (en) | 1980-08-11 | 1980-08-11 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11196580A JPS5735393A (en) | 1980-08-11 | 1980-08-11 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5735393A true JPS5735393A (en) | 1982-02-25 |
Family
ID=14574573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11196580A Pending JPS5735393A (en) | 1980-08-11 | 1980-08-11 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735393A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04146680A (en) * | 1990-10-08 | 1992-05-20 | Mitsubishi Electric Corp | Manufacture of p-type compound semiconductor, semiconductor light emitting device and manufacture thereof |
-
1980
- 1980-08-11 JP JP11196580A patent/JPS5735393A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04146680A (en) * | 1990-10-08 | 1992-05-20 | Mitsubishi Electric Corp | Manufacture of p-type compound semiconductor, semiconductor light emitting device and manufacture thereof |
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