JPS5735327A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5735327A
JPS5735327A JP11019780A JP11019780A JPS5735327A JP S5735327 A JPS5735327 A JP S5735327A JP 11019780 A JP11019780 A JP 11019780A JP 11019780 A JP11019780 A JP 11019780A JP S5735327 A JPS5735327 A JP S5735327A
Authority
JP
Japan
Prior art keywords
film
nitrogen content
content
silicon
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11019780A
Other languages
Japanese (ja)
Other versions
JPS6322059B2 (en
Inventor
Kazuo Nojiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11019780A priority Critical patent/JPS5735327A/en
Publication of JPS5735327A publication Critical patent/JPS5735327A/en
Publication of JPS6322059B2 publication Critical patent/JPS6322059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a passivation film excellent in electrical characteristics, contamination-resisting performance and crack-preventing performance, by increasing the nitrogen content on outside of a silicon nitride film covering the surface of a semiconductor, and also by increasing the silicon-content on the semiconductor side. CONSTITUTION:P type resistance regions 2 and 3 are formed on an N type epitaxial layer 1 by diffusion, and an SiO2 film 4 and a silicate phosphorus glass film 7 are provided to cover a surface containing these regions. Further, a P-SiN film 15 is allowed to grow on this. The top layer 15a of the P-SiN film 15 is a film of a relatively high nitrogen content and a low refractive index, and a bottom layer 15b is a film of a relatively high nitrogen content and a high refractive index. It is possible, by providing a film of a high nitrogen content, to lower conductivity, prevent injection of charge through the film and occurrence of polarization phenomenon, and increase strength. By providing the film of a high silicon content, it is possible to prevent the film from coming off.
JP11019780A 1980-08-13 1980-08-13 Semiconductor device Granted JPS5735327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11019780A JPS5735327A (en) 1980-08-13 1980-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11019780A JPS5735327A (en) 1980-08-13 1980-08-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735327A true JPS5735327A (en) 1982-02-25
JPS6322059B2 JPS6322059B2 (en) 1988-05-10

Family

ID=14529502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11019780A Granted JPS5735327A (en) 1980-08-13 1980-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735327A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216554A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Photoetching method
JPS6439030A (en) * 1987-08-05 1989-02-09 Toshiba Corp Formation of thin film
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
JP2012182232A (en) * 2011-02-28 2012-09-20 Sumitomo Electric Device Innovations Inc Method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554918A (en) * 1978-06-26 1980-01-14 Hitachi Ltd Passivation film structure and manufacturing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554918A (en) * 1978-06-26 1980-01-14 Hitachi Ltd Passivation film structure and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216554A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Photoetching method
JPS6439030A (en) * 1987-08-05 1989-02-09 Toshiba Corp Formation of thin film
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
EP0601093A4 (en) * 1991-08-28 1995-04-12 Advanced Power Technology Igbt process and device with platinum lifetime control.
EP1182706A2 (en) * 1991-08-28 2002-02-27 Advanced Power Technology Inc. IGBT process and device
EP1182706A3 (en) * 1991-08-28 2003-10-08 Advanced Power Technology Inc. IGBT process and device
JP2012182232A (en) * 2011-02-28 2012-09-20 Sumitomo Electric Device Innovations Inc Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6322059B2 (en) 1988-05-10

Similar Documents

Publication Publication Date Title
JPS6421967A (en) Semiconductor device and manufacture thereof
JPS567463A (en) Semiconductor device and its manufacture
JPS5563840A (en) Semiconductor integrated device
JPS5669844A (en) Manufacture of semiconductor device
JPS5735327A (en) Semiconductor device
JPS5748247A (en) Semiconductor integrated circuit device
JPS5541753A (en) Semiconductor memory
JPS56125875A (en) Semiconductor integrated circuit device
JPS6465867A (en) Semiconductor integrated circuit device
JPS57102069A (en) Semiconductor device
JPS56126977A (en) Junction type field effect transistor
JPS55110056A (en) Semiconductor device
JPS5720462A (en) Semiconductor device
JPS5696852A (en) Semiconductor device
JPS56122174A (en) Manufacture of silicon solar battery cell
JPS56131941A (en) Manufacture of semiconductor device
JPS5513935A (en) Glass for covering semiconductor
JPS57116347A (en) Photoconductive material
JPS5698856A (en) Semiconductor resistance device
JPS57192080A (en) Semiconductor device
JPS5772373A (en) Semiconductor device
JPS5750450A (en) Semiconductor device
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device
JPS54159887A (en) Semiconductor memory device
JPS57102070A (en) Semiconductor device