JPS5725989B2 - - Google Patents

Info

Publication number
JPS5725989B2
JPS5725989B2 JP2205680A JP2205680A JPS5725989B2 JP S5725989 B2 JPS5725989 B2 JP S5725989B2 JP 2205680 A JP2205680 A JP 2205680A JP 2205680 A JP2205680 A JP 2205680A JP S5725989 B2 JPS5725989 B2 JP S5725989B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2205680A
Other languages
Japanese (ja)
Other versions
JPS5626477A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2205680A priority Critical patent/JPS5626477A/en
Publication of JPS5626477A publication Critical patent/JPS5626477A/en
Publication of JPS5725989B2 publication Critical patent/JPS5725989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors with potential-jump barrier or surface barrier
    • H01L29/93Variable capacitance diodes, e.g. varactors
JP2205680A 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process Granted JPS5626477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2205680A JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2205680A JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Publications (2)

Publication Number Publication Date
JPS5626477A JPS5626477A (en) 1981-03-14
JPS5725989B2 true JPS5725989B2 (en) 1982-06-02

Family

ID=12072251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2205680A Granted JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Country Status (1)

Country Link
JP (1) JPS5626477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234975U (en) * 1988-08-30 1990-03-06

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6528033B1 (en) 2000-01-18 2003-03-04 Valence Technology, Inc. Method of making lithium-containing materials
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234975U (en) * 1988-08-30 1990-03-06

Also Published As

Publication number Publication date
JPS5626477A (en) 1981-03-14

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