JPS57211729A - Furnace for semiconductor heat treatment - Google Patents
Furnace for semiconductor heat treatmentInfo
- Publication number
- JPS57211729A JPS57211729A JP9774281A JP9774281A JPS57211729A JP S57211729 A JPS57211729 A JP S57211729A JP 9774281 A JP9774281 A JP 9774281A JP 9774281 A JP9774281 A JP 9774281A JP S57211729 A JPS57211729 A JP S57211729A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrates
- gas
- cooled
- cooling chamber
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To cool heat-treated semiconductor substrates in a short time with good efficiency, by providing a cooling part which cools semiconductor substrates being taken out adjacent to the opening of a furnace core tube for heat treatment. CONSTITUTION:A gas cooling chamber 22 with a plurality of cooling gas spout holes 23 on the peripheral wall thereof is provided in continuity to a treatment gas exhaust part 4 installed on the opening 3 of the furnace core tube 2. A photosensor 24 constituted of an LED 24a and photo detector 24b is arranged on the end part in the side of the exhaust part 4 to detect cooled materials taken into the gas cooling chamber 22. On the bottom part of the gas cooling chamber 22, a thermocouple 27 to measure the temperature of the cooled semiconductor substrates 6 is installed for the constitution of a system cooling automatically cooled materials down to a constant temperature. In this manner, the heat- treated semiconductor substrates 6 can be automatically cooled in a short time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9774281A JPS57211729A (en) | 1981-06-23 | 1981-06-23 | Furnace for semiconductor heat treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9774281A JPS57211729A (en) | 1981-06-23 | 1981-06-23 | Furnace for semiconductor heat treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57211729A true JPS57211729A (en) | 1982-12-25 |
Family
ID=14200338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9774281A Pending JPS57211729A (en) | 1981-06-23 | 1981-06-23 | Furnace for semiconductor heat treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57211729A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS64328U (en) * | 1987-06-22 | 1989-01-05 | ||
JPH02296321A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
JP2010186778A (en) * | 2009-02-10 | 2010-08-26 | Koyo Thermo System Kk | Cooler, and cooling method |
US20110079047A1 (en) * | 2009-10-02 | 2011-04-07 | Japan Super Quartz Corporation | Apparatus and method for manufacturing vitreous silica crucible |
CN109211426A (en) * | 2018-10-12 | 2019-01-15 | 中国航发沈阳发动机研究所 | A kind of air cooling total temperature detector probe gauge head |
-
1981
- 1981-06-23 JP JP9774281A patent/JPS57211729A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS64328U (en) * | 1987-06-22 | 1989-01-05 | ||
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
JPH02296321A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
JP2010186778A (en) * | 2009-02-10 | 2010-08-26 | Koyo Thermo System Kk | Cooler, and cooling method |
US20110079047A1 (en) * | 2009-10-02 | 2011-04-07 | Japan Super Quartz Corporation | Apparatus and method for manufacturing vitreous silica crucible |
KR101285455B1 (en) * | 2009-10-02 | 2013-07-12 | 쟈판 스파 쿼츠 가부시키가이샤 | Apparatus and method for manufacturing virteous silica crucible |
US8844321B2 (en) * | 2009-10-02 | 2014-09-30 | Japan Super Quartz Corporation | Apparatus and method for manufacturing vitreous silica crucible |
CN109211426A (en) * | 2018-10-12 | 2019-01-15 | 中国航发沈阳发动机研究所 | A kind of air cooling total temperature detector probe gauge head |
CN109211426B (en) * | 2018-10-12 | 2020-04-21 | 中国航发沈阳发动机研究所 | Air-cooled total temperature sensing part measuring head |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57127790A (en) | Refrigerating device for closed box | |
NO903714D0 (en) | APPARATUS FOR MONITORING OBJECTS FOR OVERHEATING. | |
JPS57211729A (en) | Furnace for semiconductor heat treatment | |
ATE111208T1 (en) | DEVICE FOR SUPPORTING PRODUCTS TO BE HEAT-TREATED IN A HEATING FURNACE. | |
JPS5742119A (en) | Decompression cvd device | |
SE8306875L (en) | DEVICE FOR A GAS PASSAGE IN A BUILDING | |
JPS577530A (en) | Method of measuring surface temperature of object | |
JPS5468082A (en) | Xenon light source | |
JPS56121941A (en) | Device for generating hot air | |
CN210394133U (en) | Heat insulation device and quartz crucible production equipment | |
ES2026670T3 (en) | GRADIENT OVEN INTENDED FOR ORIENTED SOLIDIFICATION, PARTICULARLY BY THE BRIDGMAN METHOD. | |
JPS5315798A (en) | Superconduction device | |
JPS5514129A (en) | Continuous treatment device of brazing and gas soft nitriding | |
SU637731A1 (en) | Radiant component measuring device | |
JPS5770326A (en) | Electric cooker | |
DEREVIAGA et al. | Experimental study of critical conditions of ignition for magnesium | |
JPS54152373A (en) | Lighting device | |
JPS53118845A (en) | Temperature control apparatus | |
JPS5787104A (en) | Current lead | |
JPS57126920A (en) | Apparatus for heat-treatment of pipe body | |
JPS53175A (en) | Temperature indicating apparatus | |
JPS55147325A (en) | High-temperature load detector | |
JPS5472704A (en) | Steel sheet detector | |
JPS5752742A (en) | Heat transmitting apparatus for bathtub | |
JPS51142745A (en) | Method of detecting heat pipe troubles |