JPS57210662A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS57210662A JPS57210662A JP56093812A JP9381281A JPS57210662A JP S57210662 A JPS57210662 A JP S57210662A JP 56093812 A JP56093812 A JP 56093812A JP 9381281 A JP9381281 A JP 9381281A JP S57210662 A JPS57210662 A JP S57210662A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- polysilicon layer
- wires
- load
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To enable to contract the size of a cell by forming a load resistance part of the second polysilicon layer, thereby enabling the overlap of a gate electrode and the load resistance part. CONSTITUTION:The gate electrodes G1, G2 and their wires l2, a word line W of FETs Q1, Q2 in a static memory cell formed of MISFETs Q1-Q4 formed on an element region isolated with a field SiO2 film 3 on a P type well 2 on a substrate 1 are formed of the first polysilicon layer, and load resistors R1, R2 and their wires l'1, power line l1 are formed of second polysilicon layer. An N<+> drain region 4 is contacted directly with the wire l2 from the gate electrode G2, and the wire l2 is connected to the second layer polysilicon wire l'1 at the connecting position. In this manner, the connections of the electrode G2, the drain region 4 and the load resistor R1 can be performed at one position.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093812A JPS57210662A (en) | 1981-06-19 | 1981-06-19 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093812A JPS57210662A (en) | 1981-06-19 | 1981-06-19 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57210662A true JPS57210662A (en) | 1982-12-24 |
Family
ID=14092807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56093812A Pending JPS57210662A (en) | 1981-06-19 | 1981-06-19 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57210662A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03268451A (en) * | 1990-03-19 | 1991-11-29 | Nippon Precision Circuits Kk | Semiconductor device |
-
1981
- 1981-06-19 JP JP56093812A patent/JPS57210662A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03268451A (en) * | 1990-03-19 | 1991-11-29 | Nippon Precision Circuits Kk | Semiconductor device |
JPH073835B2 (en) * | 1990-03-19 | 1995-01-18 | 日本プレシジョン・サーキッツ株式会社 | Semiconductor device |
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