JPS5720738A - Mask for pattern transfer - Google Patents
Mask for pattern transferInfo
- Publication number
- JPS5720738A JPS5720738A JP9518780A JP9518780A JPS5720738A JP S5720738 A JPS5720738 A JP S5720738A JP 9518780 A JP9518780 A JP 9518780A JP 9518780 A JP9518780 A JP 9518780A JP S5720738 A JPS5720738 A JP S5720738A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- transfer
- dust
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent the damage of the mask pattern of a mask for a projection exposure system pattern transfer method and to transfer a fine micropattern by forming a transparent protective film having a thickness larger than the effective depth of the focus of an optical system for transfer on the mask pattern. CONSTITUTION:On the surface of a photomask substrate 1 an opaque mask pattern 2 shielding beam 6 for transfer is formed with CrO2 or the like, and a transparent protective film 11 covering the pattern 2 is formed with SiO2 or the like in a thickness larger than the effective depth of the focus of an optical system for projection exposure consisting of reflecting mirrors 7-10. Thus, the sticking of dust, etc. to the surface of the pattern 2 is prevented, and when the mask is cleaned or handled, the pattern 2 is not damaged. Even if minute dust is stuck to the film 2, the image of the dust is not transferred onto a photoresist 5 forming the pattern image on a film 4 to be etched on a semiconductor substrate 3, so the pattern is transferred onto the resist 5 without causing defects even in case of a micropattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9518780A JPS5720738A (en) | 1980-07-11 | 1980-07-11 | Mask for pattern transfer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9518780A JPS5720738A (en) | 1980-07-11 | 1980-07-11 | Mask for pattern transfer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5720738A true JPS5720738A (en) | 1982-02-03 |
Family
ID=14130744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9518780A Pending JPS5720738A (en) | 1980-07-11 | 1980-07-11 | Mask for pattern transfer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5720738A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319853A (en) * | 2014-05-31 | 2016-02-10 | 罗门哈斯电子材料有限责任公司 | Imaging on substrates with aqueous alkaline soluble uv blocking compositions and aqueous soluble uv transparent films |
-
1980
- 1980-07-11 JP JP9518780A patent/JPS5720738A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319853A (en) * | 2014-05-31 | 2016-02-10 | 罗门哈斯电子材料有限责任公司 | Imaging on substrates with aqueous alkaline soluble uv blocking compositions and aqueous soluble uv transparent films |
| CN105319853B (en) * | 2014-05-31 | 2020-06-30 | 罗门哈斯电子材料有限责任公司 | Imaging on substrates with aqueous alkaline soluble UV blocking compositions and aqueous soluble UV transparent films |
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