JPS57206024A - Method of forming electrode onto compound semiconductor - Google Patents

Method of forming electrode onto compound semiconductor

Info

Publication number
JPS57206024A
JPS57206024A JP9091081A JP9091081A JPS57206024A JP S57206024 A JPS57206024 A JP S57206024A JP 9091081 A JP9091081 A JP 9091081A JP 9091081 A JP9091081 A JP 9091081A JP S57206024 A JPS57206024 A JP S57206024A
Authority
JP
Japan
Prior art keywords
layer
crystal
thickness
evaporated
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9091081A
Other languages
Japanese (ja)
Inventor
Norio Ozawa
Masato Yamashita
Noburo Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9091081A priority Critical patent/JPS57206024A/en
Publication of JPS57206024A publication Critical patent/JPS57206024A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve contact resistance and bonding property and constitute an electrode economically at mass production, by a method wherein thickness of Ag layer and amount of Zn within a film are controlled. CONSTITUTION:An n type GaP layer 12 is formed on n type GaP substrate 11 thereby a crystal is constituted, and p type layer 13 is formed on the crystal thereby p-n junction 14 is constituted. The crystal is heated in vacuum of about 10<-6>-10<-7>Torr to about 100-150 deg.C, and Ag is evaporated to thickness of about 300-1,000Angstrom thereby a first Ag layer 23a is formed. Zn is evaporated on the Ag layer 23a to thickness of about 300-1,500Angstrom thereby a second Zn layer 23b is formed. Ag is evaporated on the Zn layer 23b to thickness of about 2,000- 10,000Angstrom thereby a third Ag layer 23c is formed. Heating is performed inert gas atmosphere at 450-600 deg.C for 5-10min and Ag and Zn are diffused into the p type GaP crystal thereby an ohmic contact electrode is constituted.
JP9091081A 1981-06-15 1981-06-15 Method of forming electrode onto compound semiconductor Pending JPS57206024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9091081A JPS57206024A (en) 1981-06-15 1981-06-15 Method of forming electrode onto compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9091081A JPS57206024A (en) 1981-06-15 1981-06-15 Method of forming electrode onto compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57206024A true JPS57206024A (en) 1982-12-17

Family

ID=14011558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9091081A Pending JPS57206024A (en) 1981-06-15 1981-06-15 Method of forming electrode onto compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57206024A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024074A (en) * 1983-05-13 1985-02-06 アメリカ合衆国 Gallium arsenide semiconductor device and method of producing same
JPH01307278A (en) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd Solar cell
CN111769251A (en) * 2020-04-10 2020-10-13 上海大学 Method for protecting metal electrode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024074A (en) * 1983-05-13 1985-02-06 アメリカ合衆国 Gallium arsenide semiconductor device and method of producing same
JPH01307278A (en) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd Solar cell
CN111769251A (en) * 2020-04-10 2020-10-13 上海大学 Method for protecting metal electrode

Similar Documents

Publication Publication Date Title
ES8801065A1 (en) Method of making current collector grid and materials therefor.
JPS55121685A (en) Manufacture of photovoltaic device
JPS57206024A (en) Method of forming electrode onto compound semiconductor
JPS56137683A (en) Solar cell
JPS5730379A (en) Thin film solar battery
GB1338337A (en) Cadmium sulphide thin film sustained conductivity device and method for making same
ES8404570A1 (en) Cadmium sulphide solar cells.
JPS5669875A (en) Amorphous semiconductor solar cell
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS57197860A (en) Semiconductor device
JPS5661175A (en) Thin-film solar cell
JPS5454589A (en) Photoelectric transducer and production of the same
JPS55158680A (en) Solar cell and manufacture thereof
JPS5745288A (en) Thin film photo diode
JPS54152483A (en) Forming method for electrode of compound semiconductor light-emitting element
JPS551146A (en) Method of forming electrode in semiconductor crystal of 3-5 group compound
JPS55107257A (en) Ohmic electrode
JPS6439018A (en) Intermetallic compound semiconductor thin film and manufacture thereof
JPS55165689A (en) Preparation of light emission semiconductor device
JPS5542049A (en) Hydrogen gas detecting element
MOONEY et al. Low-cost process for p-n junction type solar cell[Final Report, 1 Sep. 1980- 28 Feb. 1981]
JPS5664473A (en) Amorphous semiconductor photocell
JPS57162417A (en) Fabrication of amorphous silicon hetero-junction element
JPS64773A (en) Photovoltaic element
JPS54158188A (en) Manufacture of semiconductor device