JPS57203293A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57203293A
JPS57203293A JP8899581A JP8899581A JPS57203293A JP S57203293 A JPS57203293 A JP S57203293A JP 8899581 A JP8899581 A JP 8899581A JP 8899581 A JP8899581 A JP 8899581A JP S57203293 A JPS57203293 A JP S57203293A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
opened
diodes
voltage
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8899581A
Other languages
Japanese (ja)
Other versions
JPS6126159B2 (en
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8899581A priority Critical patent/JPS57203293A/en
Publication of JPS57203293A publication Critical patent/JPS57203293A/en
Publication of JPS6126159B2 publication Critical patent/JPS6126159B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE: To produce a highly integrated and quickly operating programmable semiconductor integrated storage circuit form miniaturized memory cells with small parasitic capacitance by using diodes to be opened by prescribed current or voltage or more as storage elements.
CONSTITUTION: A PROM or the like is formed by a diode array 42 in which storage elements 41, 41,... using p-n junction diodes consisting of polycrystal silicic acid which are opened by prescribed forward or backward current or voltage or more are connected like a matrix. When a required element 41 is opened by forward bias voltage or the like through X and Y drivers 44, 46, writing is started. By using the miniaturized diodes with small parasitic capacitance as memory cells, the programmable semiconductor integrated storage circuit can be highly integrated and quickly operated.
COPYRIGHT: (C)1982,JPO&Japio
JP8899581A 1981-06-10 1981-06-10 Semiconductor integrated circuit Granted JPS57203293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8899581A JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8899581A JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57203293A true JPS57203293A (en) 1982-12-13
JPS6126159B2 JPS6126159B2 (en) 1986-06-19

Family

ID=13958388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8899581A Granted JPS57203293A (en) 1981-06-10 1981-06-10 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57203293A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41733E1 (en) * 1996-03-05 2010-09-21 Contour Semiconductor, Inc. Dual-addressed rectifier storage device
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415623A (en) * 1977-07-06 1979-02-05 Nec Corp Semiconductor memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415623A (en) * 1977-07-06 1979-02-05 Nec Corp Semiconductor memory unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41733E1 (en) * 1996-03-05 2010-09-21 Contour Semiconductor, Inc. Dual-addressed rectifier storage device
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory

Also Published As

Publication number Publication date
JPS6126159B2 (en) 1986-06-19

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