JPS57196581A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57196581A JPS57196581A JP8139481A JP8139481A JPS57196581A JP S57196581 A JPS57196581 A JP S57196581A JP 8139481 A JP8139481 A JP 8139481A JP 8139481 A JP8139481 A JP 8139481A JP S57196581 A JPS57196581 A JP S57196581A
- Authority
- JP
- Japan
- Prior art keywords
- umbrella
- section
- organic compound
- etching
- eave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002894 organic compounds Chemical class 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229940125810 compound 20 Drugs 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce the gate resistance of the titled device by a method wherein organic compound such as photoresistive resin and the like is filled in the eave section of the umbrella type structure consisting of the first and the second insulating layers, the first and the second insulating layers are removed, and an umbrella type metal layer is formed as a Schottky electrode. CONSTITUTION:The umbrella type structure consists of the umbrella section 14' which was formed by performing an etching on an SiO2 film 14, and the eave section 13' whch was formed by performing a plasma etching on an Si3N4 film using the umbrella section 14'. After a high density N type semiconductor layer 17 has been formed, a source electrode 18 and a drain electrode 19 are formed. Then, organic compound 20 such as photosensitive resin and the like is applied on the whole surface including the eave section 13'. After the surface of the umbrella section 14' has been exposed by performing an etching on the organic compound, the umbrella structure 15 is removed, and the metal layer 21' to be used as a Schottky electrode is evaporated using vacuum-evaporating method. Then, a Schottky electrode 21' is formed by removing the organic compound 20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139481A JPS57196581A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139481A JPS57196581A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196581A true JPS57196581A (en) | 1982-12-02 |
| JPS6233754B2 JPS6233754B2 (en) | 1987-07-22 |
Family
ID=13745081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8139481A Granted JPS57196581A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196581A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115268A (en) * | 1983-11-28 | 1985-06-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4569119A (en) * | 1983-06-13 | 1986-02-11 | Kabushiki Kaisha Toshiba | Manufacturing method of Schottky gate FET |
-
1981
- 1981-05-27 JP JP8139481A patent/JPS57196581A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4569119A (en) * | 1983-06-13 | 1986-02-11 | Kabushiki Kaisha Toshiba | Manufacturing method of Schottky gate FET |
| JPS60115268A (en) * | 1983-11-28 | 1985-06-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0213929B2 (en) * | 1983-11-28 | 1990-04-05 | Fujitsu Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6233754B2 (en) | 1987-07-22 |
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