JPS57194532A - Selective etching for organic high molecule coupling substance - Google Patents
Selective etching for organic high molecule coupling substanceInfo
- Publication number
- JPS57194532A JPS57194532A JP7952581A JP7952581A JPS57194532A JP S57194532 A JPS57194532 A JP S57194532A JP 7952581 A JP7952581 A JP 7952581A JP 7952581 A JP7952581 A JP 7952581A JP S57194532 A JPS57194532 A JP S57194532A
- Authority
- JP
- Japan
- Prior art keywords
- organic high
- high molecule
- molecule coupling
- target
- selective etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008878 coupling Effects 0.000 title abstract 5
- 238000010168 coupling process Methods 0.000 title abstract 5
- 238000005859 coupling reaction Methods 0.000 title abstract 5
- 238000005530 etching Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- 239000013032 Hydrocarbon resin Substances 0.000 abstract 2
- 229920006270 hydrocarbon resin Polymers 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- 239000004743 Polypropylene Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920003986 novolac Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- -1 polypropylene Polymers 0.000 abstract 1
- 229920001155 polypropylene Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To perform an excellent selective etching for the organic high molecule coupling substance by a method wherein a quartz plate and a hydrocarbon resin film, which is smaller than the area of a target, are provided on the target of a reactive sputter-etching device, and the above is processed in the plasma containing O2. CONSTITUTION:A plate 23, consisting of hydrocarbon resin such as polypropylene resin and the like having the area of 10-50% of the target area, and a quartz glass plate 15 are provided on the target electrode 11 of the reactive sputter-etching device. Then, an organic high molecule coupling material 14 such as novolac resin and the like having polycrystalline Si as a mask is placed, the above is processed in th plasma containing O2, and then an ethcing is selectively performed on the organic high molecule coupling material. Accordingly, the ratio of selectivity between the organic high molecule coupling material and the Si or Si oxide can be made larger, thereby enabling to maintain a smooth surface for the substrate without having no deposites there.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952581A JPS57194532A (en) | 1981-05-26 | 1981-05-26 | Selective etching for organic high molecule coupling substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952581A JPS57194532A (en) | 1981-05-26 | 1981-05-26 | Selective etching for organic high molecule coupling substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57194532A true JPS57194532A (en) | 1982-11-30 |
Family
ID=13692394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7952581A Pending JPS57194532A (en) | 1981-05-26 | 1981-05-26 | Selective etching for organic high molecule coupling substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57194532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240729A (en) * | 1985-08-15 | 1987-02-21 | Sony Corp | Etching device |
| JPS6297329A (en) * | 1985-10-24 | 1987-05-06 | Ulvac Corp | Dry etching device |
-
1981
- 1981-05-26 JP JP7952581A patent/JPS57194532A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240729A (en) * | 1985-08-15 | 1987-02-21 | Sony Corp | Etching device |
| JPS6297329A (en) * | 1985-10-24 | 1987-05-06 | Ulvac Corp | Dry etching device |
| JPH0457091B2 (en) * | 1985-10-24 | 1992-09-10 | Ulvac Corp |
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