JPS57187952A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS57187952A
JPS57187952A JP56071675A JP7167581A JPS57187952A JP S57187952 A JPS57187952 A JP S57187952A JP 56071675 A JP56071675 A JP 56071675A JP 7167581 A JP7167581 A JP 7167581A JP S57187952 A JPS57187952 A JP S57187952A
Authority
JP
Japan
Prior art keywords
circuit
semiconductor integrated
integrated circuit
terminal
main circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56071675A
Other languages
Japanese (ja)
Inventor
Kenji Natori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56071675A priority Critical patent/JPS57187952A/en
Publication of JPS57187952A publication Critical patent/JPS57187952A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To separate an inferior circuit from a main circuit of a semiconductor integrated circuit on which the main circuit and a spare circuit are provided by connecting a wiring between the main circuit and a spare circuit by an ion beam. CONSTITUTION:A load element 11 is connected between a source terminal VCC and an output terminal Vout. MOS transistors 121 and 122 which compose a main circuit and MOS transistors 121' and 122' which compose a spare circuit are connected between the terminal and the standard potential. If the transistor 121 is inferior, a discontinued part A1 is irradiated by an ion beam and connection between terminal 171 and 181 is made and the transistor 121' is connected to the terminal Vout. And a discontinued part A3 is also connected.
JP56071675A 1981-05-13 1981-05-13 Manufacture of semiconductor integrated circuit Pending JPS57187952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56071675A JPS57187952A (en) 1981-05-13 1981-05-13 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56071675A JPS57187952A (en) 1981-05-13 1981-05-13 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57187952A true JPS57187952A (en) 1982-11-18

Family

ID=13467386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56071675A Pending JPS57187952A (en) 1981-05-13 1981-05-13 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57187952A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116755A (en) * 1989-06-30 1991-05-17 American Teleph & Telegr Co <Att> Integrated circuit device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116755A (en) * 1989-06-30 1991-05-17 American Teleph & Telegr Co <Att> Integrated circuit device and method of manufacturing the same

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