JPS57187952A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS57187952A JPS57187952A JP56071675A JP7167581A JPS57187952A JP S57187952 A JPS57187952 A JP S57187952A JP 56071675 A JP56071675 A JP 56071675A JP 7167581 A JP7167581 A JP 7167581A JP S57187952 A JPS57187952 A JP S57187952A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- semiconductor integrated
- integrated circuit
- terminal
- main circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010884 ion-beam technique Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To separate an inferior circuit from a main circuit of a semiconductor integrated circuit on which the main circuit and a spare circuit are provided by connecting a wiring between the main circuit and a spare circuit by an ion beam. CONSTITUTION:A load element 11 is connected between a source terminal VCC and an output terminal Vout. MOS transistors 121 and 122 which compose a main circuit and MOS transistors 121' and 122' which compose a spare circuit are connected between the terminal and the standard potential. If the transistor 121 is inferior, a discontinued part A1 is irradiated by an ion beam and connection between terminal 171 and 181 is made and the transistor 121' is connected to the terminal Vout. And a discontinued part A3 is also connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56071675A JPS57187952A (en) | 1981-05-13 | 1981-05-13 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56071675A JPS57187952A (en) | 1981-05-13 | 1981-05-13 | Manufacture of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57187952A true JPS57187952A (en) | 1982-11-18 |
Family
ID=13467386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56071675A Pending JPS57187952A (en) | 1981-05-13 | 1981-05-13 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57187952A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116755A (en) * | 1989-06-30 | 1991-05-17 | American Teleph & Telegr Co <Att> | Integrated circuit device and method of manufacturing the same |
-
1981
- 1981-05-13 JP JP56071675A patent/JPS57187952A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116755A (en) * | 1989-06-30 | 1991-05-17 | American Teleph & Telegr Co <Att> | Integrated circuit device and method of manufacturing the same |
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