JPS57176762A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57176762A
JPS57176762A JP6088881A JP6088881A JPS57176762A JP S57176762 A JPS57176762 A JP S57176762A JP 6088881 A JP6088881 A JP 6088881A JP 6088881 A JP6088881 A JP 6088881A JP S57176762 A JPS57176762 A JP S57176762A
Authority
JP
Japan
Prior art keywords
film
prevents
electrode
reaction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6088881A
Other languages
Japanese (ja)
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6088881A priority Critical patent/JPS57176762A/en
Publication of JPS57176762A publication Critical patent/JPS57176762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To implement a high speed operation with a high yield rate and high reliability, in a bipolar transistor with a Schottky barrier diode, by providing a wiring metal film through a film which prevents the reaction between metal silicide and wiring metal. CONSTITUTION:An SiO2 film 14 is provided on a P type base region 12 in an N type Si region 11. An Al electrode 18 is provided on a platinum silicide film 16 at the part of Schottky barrier diode (SBD) through a film 17 comprising Ti and W which prevents the reaction with the platinum silicide. Meanwhile, a polysilicon film 15 including high impurity garium is provided on an N<+> type emitter region 13. An Al electrode 18 is provided thereon through a film 17 comprising Ti and W. Thus a fine pattern, which is operated at a high speed, and multilayer wiring can be provided.
JP6088881A 1981-04-22 1981-04-22 Semiconductor device Pending JPS57176762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6088881A JPS57176762A (en) 1981-04-22 1981-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6088881A JPS57176762A (en) 1981-04-22 1981-04-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57176762A true JPS57176762A (en) 1982-10-30

Family

ID=13155343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6088881A Pending JPS57176762A (en) 1981-04-22 1981-04-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57176762A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121872A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device
JPS60140847A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Semiconductor device
JPS60169169A (en) * 1984-02-13 1985-09-02 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS60241262A (en) * 1984-05-11 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Hetero structure bipolar transistor
JPS6233457A (en) * 1985-08-06 1987-02-13 Nec Corp Semiconductor integrated circuit device
US5272357A (en) * 1989-11-30 1993-12-21 Canon Kabushiki Kaisha Semiconductor device and electronic device by use of the semiconductor
WO2003021683A1 (en) * 2001-08-28 2003-03-13 Sony Corporation Semiconductor device and its manufacturing method
US7166875B2 (en) 1996-03-01 2007-01-23 Micron Technology, Inc. Vertical diode structures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146869A (en) * 1974-10-18 1976-04-21 Mitsubishi Electric Corp Handotaisochino denkyoku
JPS5177076A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS55153329A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146869A (en) * 1974-10-18 1976-04-21 Mitsubishi Electric Corp Handotaisochino denkyoku
JPS5177076A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd HANDOTAISOCHINOSEIZOHOHO
JPS55153329A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Manufacture of semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121872A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device
JPH0441498B2 (en) * 1983-12-28 1992-07-08 Fujitsu Ltd
JPS60140847A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Semiconductor device
JPS60169169A (en) * 1984-02-13 1985-09-02 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH0550129B2 (en) * 1984-02-13 1993-07-28 Fujitsu Ltd
JPS60241262A (en) * 1984-05-11 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Hetero structure bipolar transistor
JPS6233457A (en) * 1985-08-06 1987-02-13 Nec Corp Semiconductor integrated circuit device
US5272357A (en) * 1989-11-30 1993-12-21 Canon Kabushiki Kaisha Semiconductor device and electronic device by use of the semiconductor
US7279725B2 (en) 1996-03-01 2007-10-09 Micron Technology, Inc. Vertical diode structures
US8034716B2 (en) 1996-03-01 2011-10-11 Micron Technology, Inc. Semiconductor structures including vertical diode structures and methods for making the same
US7166875B2 (en) 1996-03-01 2007-01-23 Micron Technology, Inc. Vertical diode structures
US7170103B2 (en) * 1996-03-01 2007-01-30 Micron Technology, Inc. Wafer with vertical diode structures
US7563666B2 (en) 1996-03-01 2009-07-21 Micron Technology, Inc. Semiconductor structures including vertical diode structures and methods of making the same
WO2003021683A1 (en) * 2001-08-28 2003-03-13 Sony Corporation Semiconductor device and its manufacturing method
CN100361312C (en) * 2001-08-28 2008-01-09 索尼株式会社 Semiconductor device and method for manufacturing the same
US7271046B2 (en) 2001-08-28 2007-09-18 Sony Corporation Method of making a semiconductor device in which a bipolar transistor and a metal silicide layer are formed on a substrate
KR100910118B1 (en) * 2001-08-28 2009-08-03 소니 가부시끼 가이샤 Semiconductor device and its manufacturing method
US7064417B2 (en) 2001-08-28 2006-06-20 Sony Corporation Semiconductor device including a bipolar transistor

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