JPS57174459A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS57174459A
JPS57174459A JP6031681A JP6031681A JPS57174459A JP S57174459 A JPS57174459 A JP S57174459A JP 6031681 A JP6031681 A JP 6031681A JP 6031681 A JP6031681 A JP 6031681A JP S57174459 A JPS57174459 A JP S57174459A
Authority
JP
Japan
Prior art keywords
substrates
ion
particles
sputtering
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6031681A
Other languages
Japanese (ja)
Inventor
Kuninori Nishio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Namiki Precision Jewel Co Ltd
Original Assignee
Namiki Precision Jewel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namiki Precision Jewel Co Ltd filed Critical Namiki Precision Jewel Co Ltd
Priority to JP6031681A priority Critical patent/JPS57174459A/en
Publication of JPS57174459A publication Critical patent/JPS57174459A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form thin films of high adhesiveness on the surfaces of substrates by driving ionized particles into the surfaces of the substrates and sputtering targets disposed near the substrates with part of these ion particles at the same time. CONSTITUTION:Target holders 2 mounted with targets 4 and substrate holders 3 mounted with substrates 5 are mounted respectively in proximity with each other within a driving chamber 1 of an ordinary ion implantation device. The ion particles ionized in an ion source are driven out toward the substrates 5 by energy of several tens - several hundreds KeV. Part of the driven-out ion fluxes 6 are brought into collision directly against the surfaces of the substrates 5, whereby the substrate surfaces are strongly activated by sputtering or the like. Part of the ion fluxes 6 are brought into collision against the targets 4 to drive out the particles of the target forming material by sputtering and to stick them on the substrates. As a result, the thin films of high purity and firm adhesiveness are formed on the surfaces of the substrates 5.
JP6031681A 1981-04-21 1981-04-21 Formation of thin film Pending JPS57174459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6031681A JPS57174459A (en) 1981-04-21 1981-04-21 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6031681A JPS57174459A (en) 1981-04-21 1981-04-21 Formation of thin film

Publications (1)

Publication Number Publication Date
JPS57174459A true JPS57174459A (en) 1982-10-27

Family

ID=13138643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6031681A Pending JPS57174459A (en) 1981-04-21 1981-04-21 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS57174459A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974279A (en) * 1982-10-21 1984-04-26 Toyota Central Res & Dev Lab Inc Method and device for coating thin metallic film by vapor deposition
JPS60131964A (en) * 1983-12-20 1985-07-13 Nissin Electric Co Ltd Manufacture of film-coated body
JPS60141869A (en) * 1983-12-29 1985-07-26 Nissin Electric Co Ltd Method and device for forming film
JPS61124561A (en) * 1984-11-08 1986-06-12 Science & Tech Agency Manufacture of compound thin film
JPS63161168A (en) * 1986-12-24 1988-07-04 Fujitsu Ltd Formation of film by ion beam sputtering
JPS63247367A (en) * 1987-04-03 1988-10-14 Hitachi Ltd Ion beam sputtering device
JPS63282265A (en) * 1987-05-14 1988-11-18 Toppan Printing Co Ltd Ion beam sputtering device
JPS63290262A (en) * 1987-05-20 1988-11-28 Raimuzu:Kk Composite type surface treatment device
US4855026A (en) * 1988-06-02 1989-08-08 Spire Corporation Sputter enhanced ion implantation process
JP2003247066A (en) * 2002-02-25 2003-09-05 Nagasaki Prefecture Ion implantation method using sputtering method, and apparatus therefor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974279A (en) * 1982-10-21 1984-04-26 Toyota Central Res & Dev Lab Inc Method and device for coating thin metallic film by vapor deposition
JPS60131964A (en) * 1983-12-20 1985-07-13 Nissin Electric Co Ltd Manufacture of film-coated body
JPS60141869A (en) * 1983-12-29 1985-07-26 Nissin Electric Co Ltd Method and device for forming film
JPS61124561A (en) * 1984-11-08 1986-06-12 Science & Tech Agency Manufacture of compound thin film
JPS6315346B2 (en) * 1984-11-08 1988-04-04 Kagaku Gijutsucho Chokan Kanbo
JPS63161168A (en) * 1986-12-24 1988-07-04 Fujitsu Ltd Formation of film by ion beam sputtering
JPS63247367A (en) * 1987-04-03 1988-10-14 Hitachi Ltd Ion beam sputtering device
JPH0586476B2 (en) * 1987-04-03 1993-12-13 Hitachi Ltd
JPS63282265A (en) * 1987-05-14 1988-11-18 Toppan Printing Co Ltd Ion beam sputtering device
JPS63290262A (en) * 1987-05-20 1988-11-28 Raimuzu:Kk Composite type surface treatment device
JPH032947B2 (en) * 1987-05-20 1991-01-17 Surface High Performance Res
US4855026A (en) * 1988-06-02 1989-08-08 Spire Corporation Sputter enhanced ion implantation process
JP2003247066A (en) * 2002-02-25 2003-09-05 Nagasaki Prefecture Ion implantation method using sputtering method, and apparatus therefor

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