JPS5717186A - Multifunctional diode - Google Patents
Multifunctional diodeInfo
- Publication number
- JPS5717186A JPS5717186A JP9241580A JP9241580A JPS5717186A JP S5717186 A JPS5717186 A JP S5717186A JP 9241580 A JP9241580 A JP 9241580A JP 9241580 A JP9241580 A JP 9241580A JP S5717186 A JPS5717186 A JP S5717186A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- amorphous silicon
- silicon film
- laminated
- metallic electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To lengthen the diode easily by a method wherein a tin oxide transparent conductive film is laminated on a light transmitting substrate, and an amorphous silicon film, a metallic electrode, an amorphous silicon film, an N type amorphous silicon film and a metallic electrode are laminated successively. CONSTITUTION:The tin oxide transparent conductive film 2 is laminated on the light transmitting substrate 1, and the amorphous silicon film 3, the metallic electrode 4, the amorphous silicon film 5, the N type amorphous silicon film 6 and the metallic electrode 7 are laminated in order. A photodiode 8 and a blocking diode 9 are laminated integrally and formed in this manner, thus allowing the easy manufacture of the multifunctional diode with optional shape, then lengthening the diode and increasing the area of the diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9241580A JPS5717186A (en) | 1980-07-07 | 1980-07-07 | Multifunctional diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9241580A JPS5717186A (en) | 1980-07-07 | 1980-07-07 | Multifunctional diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5717186A true JPS5717186A (en) | 1982-01-28 |
Family
ID=14053780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9241580A Pending JPS5717186A (en) | 1980-07-07 | 1980-07-07 | Multifunctional diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717186A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6313448A (en) * | 1986-07-02 | 1988-01-20 | Nec Corp | Frame synchronizing system and device |
-
1980
- 1980-07-07 JP JP9241580A patent/JPS5717186A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6313448A (en) * | 1986-07-02 | 1988-01-20 | Nec Corp | Frame synchronizing system and device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52144992A (en) | Light receiving element | |
JPS55121685A (en) | Manufacture of photovoltaic device | |
JPS57104278A (en) | Photoelectric converting device | |
JPS55107276A (en) | Photoelectromotive force device | |
JPS56152278A (en) | Device for generating photo-electromotive force | |
JPS57159070A (en) | Manufacture of photo electromotive force element | |
JPS5717186A (en) | Multifunctional diode | |
JPS57201878A (en) | Solar battery watch | |
JPS56148874A (en) | Semiconductor photoelectric converter | |
JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
JPS5329685A (en) | Photo semiconductor device | |
JPS644083A (en) | Photovoltaic device | |
JPS574180A (en) | Light-emitting element in gallium nitride | |
JPS5766622A (en) | Formation of cdte film | |
JPS56130977A (en) | Solar battery | |
JPS577976A (en) | Photo electromotive force element | |
JPS57128082A (en) | Light-receiving element | |
JPS5721876A (en) | Photosensor | |
JPS5752182A (en) | Thin film transistor | |
JPS57106086A (en) | Solar cell and manufacture thereof | |
JPS5669879A (en) | Semiconductor luminous device with lens | |
JPS55123177A (en) | Solar cell | |
JPS6486572A (en) | Amorphous thin film light emitting element | |
JPS6431457A (en) | Manufacture of thin film transistor | |
JPS57183076A (en) | Field control type optical semiconductor device |