JPS57169268A - Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith - Google Patents

Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith

Info

Publication number
JPS57169268A
JPS57169268A JP5464481A JP5464481A JPS57169268A JP S57169268 A JPS57169268 A JP S57169268A JP 5464481 A JP5464481 A JP 5464481A JP 5464481 A JP5464481 A JP 5464481A JP S57169268 A JPS57169268 A JP S57169268A
Authority
JP
Japan
Prior art keywords
ohmic electrode
type
compound semiconductor
group compound
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5464481A
Other languages
Japanese (ja)
Other versions
JPS6230710B2 (en
Inventor
Kotaro Mitsui
Susumu Yoshida
Takao Oda
Masahiro Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5464481A priority Critical patent/JPS57169268A/en
Publication of JPS57169268A publication Critical patent/JPS57169268A/en
Publication of JPS6230710B2 publication Critical patent/JPS6230710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve manufacturing yield and reliability, by using Ge-Ni-Ag for an ohmic electrode material of an n type III-V group compound semiconductor. CONSTITUTION:An n type GaAs layer 2 an p type GaAs layer 3 are epitaxial- grown on an n type GaAs substrate 1, and after the substrate 1 is polished to a mirror surface, the base body is heated to 100-450 deg.C to evaporation-form Ge, Ni and Ag on the surface thereof. Next, a Ge-Ni-Ag electrode 5 (6 represents for a p type electrode) is formed by heat treatment at the temperature of 450-550 deg.C in inactive or reducible atmosphere or in vacuum. Thus, element manufacturing yield and reliability improve with the reduction of manufacturing cost.
JP5464481A 1981-04-10 1981-04-10 Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith Granted JPS57169268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5464481A JPS57169268A (en) 1981-04-10 1981-04-10 Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5464481A JPS57169268A (en) 1981-04-10 1981-04-10 Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith

Publications (2)

Publication Number Publication Date
JPS57169268A true JPS57169268A (en) 1982-10-18
JPS6230710B2 JPS6230710B2 (en) 1987-07-03

Family

ID=12976478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5464481A Granted JPS57169268A (en) 1981-04-10 1981-04-10 Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith

Country Status (1)

Country Link
JP (1) JPS57169268A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133735A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Manufacture of semiconductor device
JP2010263029A (en) * 2009-05-01 2010-11-18 Gyoseiin Genshino Iinkai Kakuno Kenkyusho Silver-containing metal ohmic contact electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133735A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Manufacture of semiconductor device
JP2010263029A (en) * 2009-05-01 2010-11-18 Gyoseiin Genshino Iinkai Kakuno Kenkyusho Silver-containing metal ohmic contact electrode

Also Published As

Publication number Publication date
JPS6230710B2 (en) 1987-07-03

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