JPS57156311A - Production of alpha-type silicon nitride powder - Google Patents
Production of alpha-type silicon nitride powderInfo
- Publication number
- JPS57156311A JPS57156311A JP3727181A JP3727181A JPS57156311A JP S57156311 A JPS57156311 A JP S57156311A JP 3727181 A JP3727181 A JP 3727181A JP 3727181 A JP3727181 A JP 3727181A JP S57156311 A JPS57156311 A JP S57156311A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- alpha
- production
- powder
- type silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Abstract
PURPOSE: A mixture resultant from adding Si3N4, SiC and silicon oxynitride to CH3SiCl3 by prescribed amounts is hydrolyzed and subjected to reductive nitriding in a nitrogen gas atmosphere at a prescribed temperature to increase the yield of silicon nitride.
CONSTITUTION: CH3SiCl3 in an amount corresponding to 1pt.wt. SiO2 is combined with 0.1W0.3 carbon powder and 0.005W1pt. at least one selected from Si3N4 powder, SiC powder and silicon oxynitride to prepare a liquid mixture. The mixture is hydrolyzed, washed and dried to give granules. The resultant granules are finely pulverized and heated in a nitrogen atmosphere at 1,300W 1,500°C to effect reductive nitriding.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3727181A JPS5932402B2 (en) | 1981-03-17 | 1981-03-17 | Method for producing α-type silicon nitride powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3727181A JPS5932402B2 (en) | 1981-03-17 | 1981-03-17 | Method for producing α-type silicon nitride powder |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57156311A true JPS57156311A (en) | 1982-09-27 |
JPS5932402B2 JPS5932402B2 (en) | 1984-08-08 |
Family
ID=12493004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3727181A Expired JPS5932402B2 (en) | 1981-03-17 | 1981-03-17 | Method for producing α-type silicon nitride powder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5932402B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4626422A (en) * | 1985-06-24 | 1986-12-02 | Gte Products Corporation | High purity high surface area silicon nitride |
-
1981
- 1981-03-17 JP JP3727181A patent/JPS5932402B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4626422A (en) * | 1985-06-24 | 1986-12-02 | Gte Products Corporation | High purity high surface area silicon nitride |
Also Published As
Publication number | Publication date |
---|---|
JPS5932402B2 (en) | 1984-08-08 |
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