JPS57147289A - Magnetic reluctance effect element - Google Patents

Magnetic reluctance effect element

Info

Publication number
JPS57147289A
JPS57147289A JP56032518A JP3251881A JPS57147289A JP S57147289 A JPS57147289 A JP S57147289A JP 56032518 A JP56032518 A JP 56032518A JP 3251881 A JP3251881 A JP 3251881A JP S57147289 A JPS57147289 A JP S57147289A
Authority
JP
Japan
Prior art keywords
magnetic
effect element
lead frame
reluctance effect
magnetic reluctance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56032518A
Other languages
Japanese (ja)
Inventor
Yasunobu Iwanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56032518A priority Critical patent/JPS57147289A/en
Publication of JPS57147289A publication Critical patent/JPS57147289A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To stabilize the operation of a magnetic reluctance effect element at the time of absence of magnetic field by forming the magnetic reluctance effect element of a magnetic film via an insulating layer on the surface of a lead frame formed of a magnetic material. CONSTITUTION:A magnetic reluctance effect element pattern 2 in which a lead frame 6 is formed of ferromagnetic material such as Ni-Fe or Ni-Co, a substrate 1 of silicon or the like is secured onto the lead frame 6 and a magnetic film of Ni-Fe or Ni-Co or the like is formed on the surface of the substrate 1 is formed. The pattern 2 is connected to lead frames 6, 6' via bonding wires 7. Bias magnetic field can be applied to the pattern 2 by magnetizing the magnetic lead frame 6, thereby stabilizing the operation at the time of absence of magnetic field.
JP56032518A 1981-03-09 1981-03-09 Magnetic reluctance effect element Pending JPS57147289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56032518A JPS57147289A (en) 1981-03-09 1981-03-09 Magnetic reluctance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56032518A JPS57147289A (en) 1981-03-09 1981-03-09 Magnetic reluctance effect element

Publications (1)

Publication Number Publication Date
JPS57147289A true JPS57147289A (en) 1982-09-11

Family

ID=12361182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56032518A Pending JPS57147289A (en) 1981-03-09 1981-03-09 Magnetic reluctance effect element

Country Status (1)

Country Link
JP (1) JPS57147289A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226980A (en) * 1985-03-30 1986-10-08 Sony Corp Sensor device and its manufacture and manufacturing equipment
JP2006170999A (en) * 2004-12-15 2006-06-29 Robert Bosch Gmbh Magnetic sensor device
US7250760B2 (en) 2003-03-03 2007-07-31 Denso Corporation Magnetic sensor
JP2008304470A (en) * 2008-07-10 2008-12-18 Asahi Kasei Electronics Co Ltd Magnetic sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226980A (en) * 1985-03-30 1986-10-08 Sony Corp Sensor device and its manufacture and manufacturing equipment
US7250760B2 (en) 2003-03-03 2007-07-31 Denso Corporation Magnetic sensor
JP2006170999A (en) * 2004-12-15 2006-06-29 Robert Bosch Gmbh Magnetic sensor device
JP2008304470A (en) * 2008-07-10 2008-12-18 Asahi Kasei Electronics Co Ltd Magnetic sensor

Similar Documents

Publication Publication Date Title
DE3684488D1 (en) EXPANSION SENSOR.
EP0054163A3 (en) Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate and method for making a field effect transistor
JPS52119213A (en) Magnetic head and its production
JPS57189320A (en) Thin film magnetic head
JPS55110009A (en) Inductance element
JPS57147289A (en) Magnetic reluctance effect element
GB1272044A (en) Improvements in or relating to magnetoresistive readout transducers
JPS5331964A (en) Production of semiconductor substrates
JPS5331983A (en) Production of semiconductor substrates
JPS538566A (en) Mounting structure of semiconductor ic circuit
JPS57104284A (en) Magnetic coupling element
JPS5323608A (en) Magnet ic recording medium
JPS577931A (en) Method for measuring gap
JPS5721882A (en) Magnetic reluctance element
JPS52113216A (en) Magnetic head
JPS56143585A (en) Magnetic bubble element
JPS53120416A (en) Production of magnetic head of thin film type
JPS5534449A (en) Thin film magnetoresistance element with bias magnetic field minute adjusting mechanism
JPS5412265A (en) Production of semiconductor elements
JPS51123073A (en) Insulated gate (type) semiconductor device
JPS52129438A (en) Reverse developing method by magnetic brush
JPS5269314A (en) Multiple element magnetic head
KR970009199B1 (en) Magnetoresistive element & processing method for fg sensor
JPS55130139A (en) Semiconductor device and its manufacturing method
JPS56111126A (en) Manufacture for magnetic head