JPS57147240A - Method of producing extrefine structure - Google Patents

Method of producing extrefine structure

Info

Publication number
JPS57147240A
JPS57147240A JP57015454A JP1545482A JPS57147240A JP S57147240 A JPS57147240 A JP S57147240A JP 57015454 A JP57015454 A JP 57015454A JP 1545482 A JP1545482 A JP 1545482A JP S57147240 A JPS57147240 A JP S57147240A
Authority
JP
Japan
Prior art keywords
extrefine
producing
producing extrefine
extrefine structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57015454A
Other languages
English (en)
Other versions
JPH0136250B2 (ja
Inventor
Kurausu Furiidoritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS57147240A publication Critical patent/JPS57147240A/ja
Publication of JPH0136250B2 publication Critical patent/JPH0136250B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57015454A 1981-02-03 1982-02-02 Method of producing extrefine structure Granted JPS57147240A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813103615 DE3103615A1 (de) 1981-02-03 1981-02-03 Verfahren zur erzeugung von extremen feinstrukturen

Publications (2)

Publication Number Publication Date
JPS57147240A true JPS57147240A (en) 1982-09-11
JPH0136250B2 JPH0136250B2 (ja) 1989-07-31

Family

ID=6123940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57015454A Granted JPS57147240A (en) 1981-02-03 1982-02-02 Method of producing extrefine structure

Country Status (4)

Country Link
US (1) US4529686A (ja)
EP (1) EP0057254B1 (ja)
JP (1) JPS57147240A (ja)
DE (2) DE3103615A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03245527A (ja) * 1990-02-23 1991-11-01 Rohm Co Ltd 微細加工方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082588A3 (en) * 1981-11-02 1983-10-26 Konica Corporation Photolithographic elements for the production of metal images
US4532532A (en) * 1982-12-30 1985-07-30 International Business Machines Corporation Submicron conductor manufacturing
JPS59124172A (ja) * 1982-12-30 1984-07-18 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Ｆｅｔ製造方法
US4542577A (en) * 1982-12-30 1985-09-24 International Business Machines Corporation Submicron conductor manufacturing
IT1185964B (it) * 1985-10-01 1987-11-18 Sgs Microelettronica Spa Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
US4687730A (en) * 1985-10-30 1987-08-18 Rca Corporation Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US4737828A (en) * 1986-03-17 1988-04-12 General Electric Company Method for gate electrode fabrication and symmetrical and non-symmetrical self-aligned inlay transistors made therefrom
US4707218A (en) * 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
AU5681194A (en) * 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US6331680B1 (en) 1996-08-07 2001-12-18 Visteon Global Technologies, Inc. Multilayer electrical interconnection device and method of making same
US6194268B1 (en) * 1998-10-30 2001-02-27 International Business Machines Corporation Printing sublithographic images using a shadow mandrel and off-axis exposure
EP1357602A1 (de) * 2002-03-19 2003-10-29 Scheuten Glasgroep Selbstjustierende Serienverschaltung von Dünnschichten und Verfahren zur Herstellung
KR100738056B1 (ko) * 2005-05-18 2007-07-12 삼성에스디아이 주식회사 Ｆｅｄ의 제조방법
US20070134943A2 (en) * 2006-04-02 2007-06-14 Dunnrowicz Clarence J Subtractive - Additive Edge Defined Lithography
US20110151190A1 (en) * 2007-05-08 2011-06-23 Jae-Hyun Chung Shadow edge lithography for nanoscale patterning and manufacturing
KR101437924B1 (ko) * 2010-01-22 2014-09-11 한국생명공학연구원 경사 증착을 이용한 리소그래피 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387360A (en) * 1965-04-01 1968-06-11 Sony Corp Method of making a semiconductor device
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03245527A (ja) * 1990-02-23 1991-11-01 Rohm Co Ltd 微細加工方法

Also Published As

Publication number Publication date
EP0057254A2 (de) 1982-08-11
US4529686A (en) 1985-07-16
DE3175038D1 (en) 1986-09-04
EP0057254B1 (de) 1986-07-30
DE3103615A1 (de) 1982-09-09
EP0057254A3 (en) 1982-09-01
JPH0136250B2 (ja) 1989-07-31

Similar Documents

Publication Publication Date Title
JPS57145328A (en) Method of producing polysilicon structure
JPS57160194A (en) Method of producing microminature circuit
JPS57147240A (en) Method of producing extrefine structure
SU1187718A3 (ru) "cпocoб пoлучehия 4-apил-4-пипepидиhkapбиhoлob"
JPS57202609A (en) Integral structure and method of producing same
GB2093678B (en) Method of producing dough
SU1179923A3 (ru) "cпocoб пoлучehия aзoлилпehtehпpoизboдhыx"
JPS57145210A (en) Method of producing conductive member
JPS5753011A (en) Method of producing superconductor
DE3260421D1 (en) Method of producing cement
SU1181542A3 (ru) "cпocoб пoлучehия пpoизboдhыx okcaдиaзoлидиha"
JPS57143803A (en) Method of forming resisotr
JPS57136791A (en) Method of producing quali-fuel rod
JPS57141911A (en) Method of producing capacitor
JPS5778785A (en) Method of producing micropin
JPS5778784A (en) Method of producing micropin
JPS57136710A (en) Method of producing flat cable
JPS57115816A (en) Method of producing composite part
JPS57196473A (en) Method of producing bulb
JPS5746477A (en) Method of producing superconductor
SU1279533A1 (ru) "cпocoб пoлучehия пoлигekcametилehaдипamидa"
SU1009052A1 (ru) Cпocoб пoлучehия 2-hиtpoдибehзo-п-диokcиha
JPS57136792A (en) Method of producing quali-fuel rod
JPS57182974A (en) Method of producing electrode
JPS57169225A (en) Method of producing reisn-filled capacitor