JPS57138184A - Solar cell device - Google Patents

Solar cell device

Info

Publication number
JPS57138184A
JPS57138184A JP56024436A JP2443681A JPS57138184A JP S57138184 A JPS57138184 A JP S57138184A JP 56024436 A JP56024436 A JP 56024436A JP 2443681 A JP2443681 A JP 2443681A JP S57138184 A JPS57138184 A JP S57138184A
Authority
JP
Japan
Prior art keywords
solar cell
elements
layer
making
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56024436A
Other languages
Japanese (ja)
Inventor
Seiichi Nagata
Koshiro Mori
Shinichiro Ishihara
Masaharu Ono
Masatoshi Kitagawa
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56024436A priority Critical patent/JPS57138184A/en
Publication of JPS57138184A publication Critical patent/JPS57138184A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To acquire a cheap solar cell array, by connecting a bypass diode to align optical electromotive force of a solar cell to the positive direction in parallel with each element of solar cells combined in series and parallel, making an active layer for elements and diodes of the same material, and piling them up on the same substrate. CONSTITUTION:Solar cell elements 3, 3' and bypass diodes 4, 4' are accumulated on the same substrate 5, held by a frame 6, and made into an array of unit elements. It consists of an N<+> type layer 9, a neutral layer 10, and P<+> type layer 11 of amorphous Si formed by glow discharge on a conductive substrate of metal with a cut 15 at the center as for the unit element. A transparent conductive film 12 is attached on a layer 11 except for the position corresponding to the cut 15. Next, a grid electrode 13 is provided on one of films 12 divided in two, making a solar cell element part. The other is covered with a metal electrode 14 on the whole surface, making a bypass diode part. The unit elements are combined in series and parallel thereafter to obtain desirable electromotive force.
JP56024436A 1981-02-20 1981-02-20 Solar cell device Pending JPS57138184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56024436A JPS57138184A (en) 1981-02-20 1981-02-20 Solar cell device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56024436A JPS57138184A (en) 1981-02-20 1981-02-20 Solar cell device

Publications (1)

Publication Number Publication Date
JPS57138184A true JPS57138184A (en) 1982-08-26

Family

ID=12138094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56024436A Pending JPS57138184A (en) 1981-02-20 1981-02-20 Solar cell device

Country Status (1)

Country Link
JP (1) JPS57138184A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091616A (en) * 1998-09-04 2000-03-31 Eev Ltd Manufacture of solar battery array
EP2652795A2 (en) * 2010-12-14 2013-10-23 Sunpower Corporation Bypass diode for a solar cell
KR20170012410A (en) * 2014-05-29 2017-02-02 선파워 코포레이션 In-cell bypass diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887935A (en) * 1972-11-03 1975-06-03 Licentia Gmbh Integrated semiconductor arrangement including solar cell and a Schottky diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887935A (en) * 1972-11-03 1975-06-03 Licentia Gmbh Integrated semiconductor arrangement including solar cell and a Schottky diode

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091616A (en) * 1998-09-04 2000-03-31 Eev Ltd Manufacture of solar battery array
JP4568393B2 (en) * 1998-09-04 2010-10-27 イー２ヴイ テクノロジーズ （ユーケイ） リミテッド Manufacturing method of solar cell array
EP2652795A2 (en) * 2010-12-14 2013-10-23 Sunpower Corporation Bypass diode for a solar cell
EP2652795A4 (en) * 2010-12-14 2014-11-26 Sunpower Corp Bypass diode for a solar cell
KR20170012410A (en) * 2014-05-29 2017-02-02 선파워 코포레이션 In-cell bypass diode
JP2017517869A (en) * 2014-05-29 2017-06-29 サンパワー コーポレイション In-cell bypass diode
US11508860B2 (en) 2014-05-29 2022-11-22 Sunpower Corporation In-cell bypass diode
US11869992B2 (en) 2014-05-29 2024-01-09 Maxeon Solar Pte. Ltd. In-cell bypass diode

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