JPS5713817A - Gate driving circuit of electrostatic inductive transistor - Google Patents

Gate driving circuit of electrostatic inductive transistor

Info

Publication number
JPS5713817A
JPS5713817A JP8805980A JP8805980A JPS5713817A JP S5713817 A JPS5713817 A JP S5713817A JP 8805980 A JP8805980 A JP 8805980A JP 8805980 A JP8805980 A JP 8805980A JP S5713817 A JPS5713817 A JP S5713817A
Authority
JP
Japan
Prior art keywords
sit
switching
driving circuit
gate driving
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8805980A
Other languages
English (en)
Other versions
JPS619776B2 (ja
Inventor
Shuhei Furuichi
Masakazu Suzuki
Toshiaki Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
J Morita Manufaturing Corp
Original Assignee
J Morita Manufaturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by J Morita Manufaturing Corp filed Critical J Morita Manufaturing Corp
Priority to JP8805980A priority Critical patent/JPS5713817A/ja
Priority to US06/276,719 priority patent/US4410809A/en
Priority to FI811992A priority patent/FI73102C/fi
Priority to DE3125242A priority patent/DE3125242C2/de
Publication of JPS5713817A publication Critical patent/JPS5713817A/ja
Publication of JPS619776B2 publication Critical patent/JPS619776B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
JP8805980A 1980-06-27 1980-06-27 Gate driving circuit of electrostatic inductive transistor Granted JPS5713817A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8805980A JPS5713817A (en) 1980-06-27 1980-06-27 Gate driving circuit of electrostatic inductive transistor
US06/276,719 US4410809A (en) 1980-06-27 1981-06-23 Static induction transistor gate driving circuit
FI811992A FI73102C (fi) 1980-06-27 1981-06-25 Gallerstyrkrets vid en statisk induktionstransistor.
DE3125242A DE3125242C2 (de) 1980-06-27 1981-06-26 Gate-Treiberschaltung für einen Static-Induction-Transistor (SIT)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8805980A JPS5713817A (en) 1980-06-27 1980-06-27 Gate driving circuit of electrostatic inductive transistor

Publications (2)

Publication Number Publication Date
JPS5713817A true JPS5713817A (en) 1982-01-23
JPS619776B2 JPS619776B2 (ja) 1986-03-26

Family

ID=13932266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8805980A Granted JPS5713817A (en) 1980-06-27 1980-06-27 Gate driving circuit of electrostatic inductive transistor

Country Status (4)

Country Link
US (1) US4410809A (ja)
JP (1) JPS5713817A (ja)
DE (1) DE3125242C2 (ja)
FI (1) FI73102C (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604037U (ja) * 1983-06-22 1985-01-12 ヤマハ株式会社 電力増幅用mos−fetのドライブ回路

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164338U (ja) * 1982-04-27 1983-11-01 フアナツク株式会社 無接点リレ−
EP0101751B1 (de) * 1982-08-25 1991-08-21 Ibm Deutschland Gmbh Transistor-Leistungsverstärker mit verringerten Schaltzeiten
DE3615417A1 (de) * 1986-05-07 1987-11-12 Bosch Gmbh Robert Anzeigevorrichtung fuer informationen auf lc-display
DE3822958A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Modulationsverstaerker fuer hohe spannungen
DE3822991A1 (de) * 1988-07-07 1990-01-11 Olympia Aeg Hochspannungsschalter
US4859927A (en) * 1988-10-28 1989-08-22 Fisher Scientific Company Power supply with improved switching regulator
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
GB2427482B (en) * 2004-07-02 2007-05-02 Ohm Ltd Electromagnetic surveying
EP3148077B1 (en) 2015-09-25 2019-07-17 Delta Electronics (Thailand) Public Co., Ltd. Driver for a p-channel mosfet

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260384A (ja) * 1960-01-25
DE2131269C3 (de) * 1971-06-24 1980-06-12 Te Ka De Felten & Guilleaume Fernmeldeanlagen Gmbh, 8500 Nuernberg Schaltungsanordnung zum Umpolen einer Gleichspannung
JPS54102859A (en) * 1978-01-30 1979-08-13 Sony Corp Pulse amplifier circuit
JPS54134547A (en) * 1978-04-11 1979-10-19 Sony Corp Mosfet switching circuit
US4347445A (en) * 1979-12-31 1982-08-31 Exxon Research And Engineering Co. Floating hybrid switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604037U (ja) * 1983-06-22 1985-01-12 ヤマハ株式会社 電力増幅用mos−fetのドライブ回路

Also Published As

Publication number Publication date
FI811992L (fi) 1981-12-28
FI73102B (fi) 1987-04-30
DE3125242A1 (de) 1982-03-04
DE3125242C2 (de) 1983-01-27
JPS619776B2 (ja) 1986-03-26
FI73102C (fi) 1987-08-10
US4410809A (en) 1983-10-18

Similar Documents

Publication Publication Date Title
JPS55128870A (en) Electrostatic induction thyristor and semiconductor device
JPS5713817A (en) Gate driving circuit of electrostatic inductive transistor
EP0336741A3 (en) Semiconductor integrated circuit with bipolar transistors and mosfets
JPS55147038A (en) Electronic circuit
JPS5545276A (en) Gate circuit of gate turn-off thyristor
JPS5330760A (en) Switch device for condenser
JPS51150261A (en) Pnpn switch driving system
GB1393306A (en) Circuit arrangement including an inductive load circuit which is provided with a switching transistor for switching on and off the load current therein
JPS5235572A (en) Semiconductor switch
JPS5286049A (en) Semiconductor switch
GB1479930A (en) Switching circuits
JPS57192936A (en) Photographing inhibiting device for camera
JPS54130872A (en) Bistable relay driving circuit
JPS56157643A (en) Dc power source device for car
JPS55115730A (en) Switching circuit
JPS52150079A (en) Peak value detection circuit
JPS54118160A (en) Thyristor control output circuit
JPS5372154A (en) Transistor switching driver circuit
JPS5797929A (en) Drive circuit of electromagnetic clutch
JPS5465466A (en) Control circuit for thyristor
JPS5457623A (en) Transistor chopper device
JPS55114192A (en) Dc motor
JPS5666932A (en) Absorption circuit of counter electromotive force for direct current load drive circuit
JPS5518861A (en) Semiconductor snubber circuit
JPS5235038A (en) Voltage transformer for use in automobiles