JPS5713817A - Gate driving circuit of electrostatic inductive transistor - Google Patents
Gate driving circuit of electrostatic inductive transistorInfo
- Publication number
- JPS5713817A JPS5713817A JP8805980A JP8805980A JPS5713817A JP S5713817 A JPS5713817 A JP S5713817A JP 8805980 A JP8805980 A JP 8805980A JP 8805980 A JP8805980 A JP 8805980A JP S5713817 A JPS5713817 A JP S5713817A
- Authority
- JP
- Japan
- Prior art keywords
- sit
- switching
- driving circuit
- gate driving
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8805980A JPS5713817A (en) | 1980-06-27 | 1980-06-27 | Gate driving circuit of electrostatic inductive transistor |
US06/276,719 US4410809A (en) | 1980-06-27 | 1981-06-23 | Static induction transistor gate driving circuit |
FI811992A FI73102C (fi) | 1980-06-27 | 1981-06-25 | Gallerstyrkrets vid en statisk induktionstransistor. |
DE3125242A DE3125242C2 (de) | 1980-06-27 | 1981-06-26 | Gate-Treiberschaltung für einen Static-Induction-Transistor (SIT) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8805980A JPS5713817A (en) | 1980-06-27 | 1980-06-27 | Gate driving circuit of electrostatic inductive transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713817A true JPS5713817A (en) | 1982-01-23 |
JPS619776B2 JPS619776B2 (ja) | 1986-03-26 |
Family
ID=13932266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8805980A Granted JPS5713817A (en) | 1980-06-27 | 1980-06-27 | Gate driving circuit of electrostatic inductive transistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4410809A (ja) |
JP (1) | JPS5713817A (ja) |
DE (1) | DE3125242C2 (ja) |
FI (1) | FI73102C (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS604037U (ja) * | 1983-06-22 | 1985-01-12 | ヤマハ株式会社 | 電力増幅用mos−fetのドライブ回路 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58164338U (ja) * | 1982-04-27 | 1983-11-01 | フアナツク株式会社 | 無接点リレ− |
EP0101751B1 (de) * | 1982-08-25 | 1991-08-21 | Ibm Deutschland Gmbh | Transistor-Leistungsverstärker mit verringerten Schaltzeiten |
DE3615417A1 (de) * | 1986-05-07 | 1987-11-12 | Bosch Gmbh Robert | Anzeigevorrichtung fuer informationen auf lc-display |
DE3822958A1 (de) * | 1988-07-07 | 1990-01-11 | Olympia Aeg | Modulationsverstaerker fuer hohe spannungen |
DE3822991A1 (de) * | 1988-07-07 | 1990-01-11 | Olympia Aeg | Hochspannungsschalter |
US4859927A (en) * | 1988-10-28 | 1989-08-22 | Fisher Scientific Company | Power supply with improved switching regulator |
US5134323A (en) * | 1990-08-03 | 1992-07-28 | Congdon James E | Three terminal noninverting transistor switch |
GB2427482B (en) * | 2004-07-02 | 2007-05-02 | Ohm Ltd | Electromagnetic surveying |
EP3148077B1 (en) | 2015-09-25 | 2019-07-17 | Delta Electronics (Thailand) Public Co., Ltd. | Driver for a p-channel mosfet |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL260384A (ja) * | 1960-01-25 | |||
DE2131269C3 (de) * | 1971-06-24 | 1980-06-12 | Te Ka De Felten & Guilleaume Fernmeldeanlagen Gmbh, 8500 Nuernberg | Schaltungsanordnung zum Umpolen einer Gleichspannung |
JPS54102859A (en) * | 1978-01-30 | 1979-08-13 | Sony Corp | Pulse amplifier circuit |
JPS54134547A (en) * | 1978-04-11 | 1979-10-19 | Sony Corp | Mosfet switching circuit |
US4347445A (en) * | 1979-12-31 | 1982-08-31 | Exxon Research And Engineering Co. | Floating hybrid switch |
-
1980
- 1980-06-27 JP JP8805980A patent/JPS5713817A/ja active Granted
-
1981
- 1981-06-23 US US06/276,719 patent/US4410809A/en not_active Expired - Fee Related
- 1981-06-25 FI FI811992A patent/FI73102C/fi not_active IP Right Cessation
- 1981-06-26 DE DE3125242A patent/DE3125242C2/de not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS604037U (ja) * | 1983-06-22 | 1985-01-12 | ヤマハ株式会社 | 電力増幅用mos−fetのドライブ回路 |
Also Published As
Publication number | Publication date |
---|---|
FI811992L (fi) | 1981-12-28 |
FI73102B (fi) | 1987-04-30 |
DE3125242A1 (de) | 1982-03-04 |
DE3125242C2 (de) | 1983-01-27 |
JPS619776B2 (ja) | 1986-03-26 |
FI73102C (fi) | 1987-08-10 |
US4410809A (en) | 1983-10-18 |
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