JPS57136331A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57136331A JPS57136331A JP2259781A JP2259781A JPS57136331A JP S57136331 A JPS57136331 A JP S57136331A JP 2259781 A JP2259781 A JP 2259781A JP 2259781 A JP2259781 A JP 2259781A JP S57136331 A JPS57136331 A JP S57136331A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- film
- section
- heat treatment
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the generation of a heat treatment induced defect stably on the surface and in the vicinity of the surface of a semiconductor wafer by forming a polycrystal silicon film functioning as a sink absorbing the heat treatment induced defect to the back of the wafer and thermally treating the wafer under a condition that silicon nitride film is shaped to the back of the wafer. CONSTITUTION:The poly Si film 44 is formed to the back of the Si wafer 41 within the thickness of 200-1,000nm through a CVD method proper (film forming temperatue is 600-900 deg.C) utilizing the pyrolysis of SH4, and the wafer is warped by the compressive stress of the film 44 so that the surface side is concaved. The Si nitride film 45 is deposited within the range of 100-500nm through the CVD method without oxidizing the film 44, and the wafer is warped so that the surface side is convexed. When the wafer is thermally treated for approximately one hour in the wet O2 of 1,100 deg.C, the generation of a crystal defect based on heat treatment is concentrated to a region extending over the back section from the central section of the section of the wafer by the action of the sink and a stress gradient, and a non-defect condition is obtained in the vicinity of the surface section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2259781A JPS57136331A (en) | 1981-02-17 | 1981-02-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2259781A JPS57136331A (en) | 1981-02-17 | 1981-02-17 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57136331A true JPS57136331A (en) | 1982-08-23 |
| JPH033386B2 JPH033386B2 (en) | 1991-01-18 |
Family
ID=12087242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2259781A Granted JPS57136331A (en) | 1981-02-17 | 1981-02-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57136331A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018190932A (en) * | 2017-05-11 | 2018-11-29 | 新日本無線株式会社 | Semiconductor device manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52120777A (en) * | 1976-04-02 | 1977-10-11 | Ibm | Ic |
-
1981
- 1981-02-17 JP JP2259781A patent/JPS57136331A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52120777A (en) * | 1976-04-02 | 1977-10-11 | Ibm | Ic |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018190932A (en) * | 2017-05-11 | 2018-11-29 | 新日本無線株式会社 | Semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH033386B2 (en) | 1991-01-18 |
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