JPS57135794A - Method of growing crystal of low-melting oxide - Google Patents
Method of growing crystal of low-melting oxideInfo
- Publication number
- JPS57135794A JPS57135794A JP1784581A JP1784581A JPS57135794A JP S57135794 A JPS57135794 A JP S57135794A JP 1784581 A JP1784581 A JP 1784581A JP 1784581 A JP1784581 A JP 1784581A JP S57135794 A JPS57135794 A JP S57135794A
- Authority
- JP
- Japan
- Prior art keywords
- low
- growing
- single crystal
- furnace
- growing crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: The upper part of a furnace for growing a single crystal is made of an insulation material transmitting visible light to effect the growth of a single crystal, thus making it possible to watch the growth adequately, even when the growing temperature is low.
CONSTITUTION: The upper structure for heat insulation is made of a heat-resistant material transmitting visible light such as transparent quartz in the furnace for growing a signal crystal. The use of this furnace makes it possible to grow a single crystal of TeO2 at a temperature as low as 750°C under adequate watching.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784581A JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784581A JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57135794A true JPS57135794A (en) | 1982-08-21 |
Family
ID=11955001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1784581A Pending JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57135794A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
| JPH0527011U (en) * | 1991-05-01 | 1993-04-06 | 徳治 宮崎 | Gloves with bag |
| WO2010111965A1 (en) * | 2009-04-03 | 2010-10-07 | 上海硅酸盐研究所中试基地 | High-purity tellurium dioxide single crystal and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5156787A (en) * | 1974-11-14 | 1976-05-18 | Sumitomo Electric Industries | SANKABUTSUTANKETSUSHONO HIKIAGE SOCHI |
-
1981
- 1981-02-09 JP JP1784581A patent/JPS57135794A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5156787A (en) * | 1974-11-14 | 1976-05-18 | Sumitomo Electric Industries | SANKABUTSUTANKETSUSHONO HIKIAGE SOCHI |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
| JPH0527011U (en) * | 1991-05-01 | 1993-04-06 | 徳治 宮崎 | Gloves with bag |
| WO2010111965A1 (en) * | 2009-04-03 | 2010-10-07 | 上海硅酸盐研究所中试基地 | High-purity tellurium dioxide single crystal and manufacturing method thereof |
| US8480996B2 (en) | 2009-04-03 | 2013-07-09 | Research And Development Center, Shanghai Institute Of Ceramics | High-purity tellurium dioxide single crystal and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3363861D1 (en) | Temperature-responsive pacifier assembly and process for manufacturing same | |
| JPS56114895A (en) | Manufacture of high purity single crystal by czochralski crucible pullinggup method | |
| JPS5457498A (en) | Gallium phosphide single crystal of low defect density and production thereof | |
| JPS57135794A (en) | Method of growing crystal of low-melting oxide | |
| MY104640A (en) | Apparatus for manufacturing silicon single crystals. | |
| JPS549174A (en) | Method of producing seingle crystal | |
| JPS57156342A (en) | Purification of raw material powder for quartz glass | |
| JPS569298A (en) | Method of growing silicon crystal | |
| JPS6445799A (en) | Production of cadmium telluride based crystal | |
| JPS5413477A (en) | Continuous growing apparatus for single crystal | |
| JPS55109241A (en) | Production of phosphate glass having good transmission in short-wave region | |
| JPS5532717A (en) | Jewelly material | |
| JPS5412587A (en) | Warpage reducing method of lithium tantalate single crystal wafers | |
| JPS5717494A (en) | Manufacture of single crystal | |
| JPS5413475A (en) | Preparation of single crystal | |
| JPS5562889A (en) | Colored chrysolite group single crystal | |
| JPS538562A (en) | Growing method of perfect silicon single crystal | |
| JPS54141389A (en) | Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible | |
| JPS53119789A (en) | Electric furnace for crystal growth | |
| JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
| JPS5742597A (en) | Capsule agent for preparing single crystal | |
| JPS52142679A (en) | Crystal growth method | |
| JPS5328600A (en) | Production of oxide single crystal for surface-wave and piezoelectric application | |
| JPS5792599A (en) | Production of single crystal of ferrite | |
| JPS649665A (en) | Manufacture of radiation detection element |