JPS57135794A - Method of growing crystal of low-melting oxide - Google Patents
Method of growing crystal of low-melting oxideInfo
- Publication number
- JPS57135794A JPS57135794A JP1784581A JP1784581A JPS57135794A JP S57135794 A JPS57135794 A JP S57135794A JP 1784581 A JP1784581 A JP 1784581A JP 1784581 A JP1784581 A JP 1784581A JP S57135794 A JPS57135794 A JP S57135794A
- Authority
- JP
- Japan
- Prior art keywords
- low
- growing
- single crystal
- furnace
- growing crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: The upper part of a furnace for growing a single crystal is made of an insulation material transmitting visible light to effect the growth of a single crystal, thus making it possible to watch the growth adequately, even when the growing temperature is low.
CONSTITUTION: The upper structure for heat insulation is made of a heat-resistant material transmitting visible light such as transparent quartz in the furnace for growing a signal crystal. The use of this furnace makes it possible to grow a single crystal of TeO2 at a temperature as low as 750°C under adequate watching.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1784581A JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1784581A JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57135794A true JPS57135794A (en) | 1982-08-21 |
Family
ID=11955001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1784581A Pending JPS57135794A (en) | 1981-02-09 | 1981-02-09 | Method of growing crystal of low-melting oxide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57135794A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
JPH0527011U (en) * | 1991-05-01 | 1993-04-06 | 徳治 宮崎 | Gloves with bag |
WO2010111965A1 (en) * | 2009-04-03 | 2010-10-07 | 上海硅酸盐研究所中试基地 | High-purity tellurium dioxide single crystal and manufacturing method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5156787A (en) * | 1974-11-14 | 1976-05-18 | Sumitomo Electric Industries | SANKABUTSUTANKETSUSHONO HIKIAGE SOCHI |
-
1981
- 1981-02-09 JP JP1784581A patent/JPS57135794A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5156787A (en) * | 1974-11-14 | 1976-05-18 | Sumitomo Electric Industries | SANKABUTSUTANKETSUSHONO HIKIAGE SOCHI |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
JPH0527011U (en) * | 1991-05-01 | 1993-04-06 | 徳治 宮崎 | Gloves with bag |
WO2010111965A1 (en) * | 2009-04-03 | 2010-10-07 | 上海硅酸盐研究所中试基地 | High-purity tellurium dioxide single crystal and manufacturing method thereof |
US8480996B2 (en) | 2009-04-03 | 2013-07-09 | Research And Development Center, Shanghai Institute Of Ceramics | High-purity tellurium dioxide single crystal and manufacturing method thereof |
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