JPS57133368A - Discrimination of quality of semiconductor laser diode - Google Patents

Discrimination of quality of semiconductor laser diode

Info

Publication number
JPS57133368A
JPS57133368A JP1802981A JP1802981A JPS57133368A JP S57133368 A JPS57133368 A JP S57133368A JP 1802981 A JP1802981 A JP 1802981A JP 1802981 A JP1802981 A JP 1802981A JP S57133368 A JPS57133368 A JP S57133368A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser diode
quality
electrification
current density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1802981A
Other languages
Japanese (ja)
Other versions
JPH0125428B2 (en
Inventor
Koichi Wakita
Mitsuo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1802981A priority Critical patent/JPS57133368A/en
Publication of JPS57133368A publication Critical patent/JPS57133368A/en
Publication of JPH0125428B2 publication Critical patent/JPH0125428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To conduct the discrimination of the quality of the laser diode in a short time by deteriorating an inferior element with a prescribed high current made to run for a prescribed time through the semiconductor laser diode and by measuring a laser oscillation threshold-value current thereafter. CONSTITUTION:It has been found that a semiconductor laser diode which deteriorates at an initial stage deteriorates in inverse proportion to the square of a current density. In electrification with a high current density, however, it may cause the oscillation of the laser, an excessively high output is released thereby, and thus the inside of the device or the reflecting surface thereof is broken down or deteriorated forcedly. Therefore, the semiconductor diode 9 is fixed on a jig 13 provided with a heater heating the semiconductor laser so as to prevent the oscillation of the laser and then the electrification is conducted with the high current density. An excellent element is not deteriorated at all even when the electrification is made for more than twenty-four hours by this method, while the deterioration is detected with respect to the inferior element, and thus the quality of the semiconductor laser diode can be discriminated in a comparatively short time.
JP1802981A 1981-02-12 1981-02-12 Discrimination of quality of semiconductor laser diode Granted JPS57133368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1802981A JPS57133368A (en) 1981-02-12 1981-02-12 Discrimination of quality of semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1802981A JPS57133368A (en) 1981-02-12 1981-02-12 Discrimination of quality of semiconductor laser diode

Publications (2)

Publication Number Publication Date
JPS57133368A true JPS57133368A (en) 1982-08-18
JPH0125428B2 JPH0125428B2 (en) 1989-05-17

Family

ID=11960234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1802981A Granted JPS57133368A (en) 1981-02-12 1981-02-12 Discrimination of quality of semiconductor laser diode

Country Status (1)

Country Link
JP (1) JPS57133368A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231183A (en) * 1984-04-28 1985-11-16 Fujitsu Ltd Measurement of characteristics of semiconductor light emitting apparatus
WO1994009378A1 (en) * 1992-10-13 1994-04-28 Cree Research, Inc. System and method for accelerated degradation testing of semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231183A (en) * 1984-04-28 1985-11-16 Fujitsu Ltd Measurement of characteristics of semiconductor light emitting apparatus
JPH0579948B2 (en) * 1984-04-28 1993-11-05 Fujitsu Ltd
WO1994009378A1 (en) * 1992-10-13 1994-04-28 Cree Research, Inc. System and method for accelerated degradation testing of semiconductor devices
US5381103A (en) * 1992-10-13 1995-01-10 Cree Research, Inc. System and method for accelerated degradation testing of semiconductor devices

Also Published As

Publication number Publication date
JPH0125428B2 (en) 1989-05-17

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