JPS571275A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPS571275A JPS571275A JP7509380A JP7509380A JPS571275A JP S571275 A JPS571275 A JP S571275A JP 7509380 A JP7509380 A JP 7509380A JP 7509380 A JP7509380 A JP 7509380A JP S571275 A JPS571275 A JP S571275A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- light emitting
- stem
- constitution
- reflecting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To expand the effective light emitting area and to obtain excellent appearance by providing a concave reflecting surface at the top of one lead of a stem and removing the part facing another lead along the length reaching the bottom. CONSTITUTION:The tip of one lead 64 of the stem is configured as the concave reflecting surface. The part thereof facing the other lead 74 is removed along the length reaching the bottom. The flat end of the lead 74 is located on the same plane as the bottom surface of the lead 64. In this constitution, if a flip chip element having an M-I-N junction structure such as GaN is attached, with a lead 65 as the I side and a lead 75 as the N side, the light emitted from the chip side is reflected and advanced forward. Thus the emitting region looks like as if it is expanded. Even though the long and slender element is used, unnatural apperanace can be corrected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7509380A JPS571275A (en) | 1980-06-03 | 1980-06-03 | Light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7509380A JPS571275A (en) | 1980-06-03 | 1980-06-03 | Light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS571275A true JPS571275A (en) | 1982-01-06 |
Family
ID=13566205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7509380A Pending JPS571275A (en) | 1980-06-03 | 1980-06-03 | Light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS571275A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6181155U (en) * | 1984-10-31 | 1986-05-29 | ||
US8502239B2 (en) | 2003-05-13 | 2013-08-06 | Bridgelux, Inc. | High power allngan based multi-chip light emitting diode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546573A (en) * | 1978-09-30 | 1980-04-01 | Toshiba Corp | Electrode member for light emission device, method of fabricating the same and punch therefor |
-
1980
- 1980-06-03 JP JP7509380A patent/JPS571275A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5546573A (en) * | 1978-09-30 | 1980-04-01 | Toshiba Corp | Electrode member for light emission device, method of fabricating the same and punch therefor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6181155U (en) * | 1984-10-31 | 1986-05-29 | ||
US8502239B2 (en) | 2003-05-13 | 2013-08-06 | Bridgelux, Inc. | High power allngan based multi-chip light emitting diode |
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