JPS5712583A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5712583A
JPS5712583A JP8704280A JP8704280A JPS5712583A JP S5712583 A JPS5712583 A JP S5712583A JP 8704280 A JP8704280 A JP 8704280A JP 8704280 A JP8704280 A JP 8704280A JP S5712583 A JPS5712583 A JP S5712583A
Authority
JP
Japan
Prior art keywords
layer
stripe
oscillation
substrate
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8704280A
Other languages
Japanese (ja)
Other versions
JPS6353715B2 (en
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704280A priority Critical patent/JPS5712583A/en
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5712583A publication Critical patent/JPS5712583A/en
Publication of JPS6353715B2 publication Critical patent/JPS6353715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce the threshold value and to obtain the excellent oscillation characteristic for the subject semiconductor laser by a method wherein a stripe is formed along the prescribed direction on a semiconductor substrate by performing an etching, and an active layer is formed by performing epitaxial growth and the oscillation of a fundamental lateral mode is performed as far as to a high injection current region. CONSTITUTION:The face of direction [011] or [01(-1)] of a semiconductor substrate 1 having face orientation 100 is discriminated by a sample substrate and along said direction, a mesa-formed stripe 2 is formed by performing an etching. After this stripe 2 has been formed, an NInP layer 3, an active layer 4 and a PInP layer 5 are epitaxially grown successively, and then an SiO2 film 6 is formed. On the layer 6 and the substrate 1, electrodes 7 and 8 are formed respectively and an oscillation can be performed as far as to the high injection current region in a fundamental lateral mode and the threshold value is reduced, thereby enabling to obtain an excellent oscillation characteristic.
JP8704280A 1980-06-26 1980-06-26 Manufacture of semiconductor laser Granted JPS5712583A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8704280A JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704280A JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5712583A true JPS5712583A (en) 1982-01-22
JPS6353715B2 JPS6353715B2 (en) 1988-10-25

Family

ID=13903878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704280A Granted JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712583A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183987A (en) * 1985-02-08 1986-08-16 Sony Corp Semiconductor laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF QUANTUM ELECTRONICS=1980 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183987A (en) * 1985-02-08 1986-08-16 Sony Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS6353715B2 (en) 1988-10-25

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