JPS5712484A - Differential amplifier - Google Patents
Differential amplifierInfo
- Publication number
- JPS5712484A JPS5712484A JP8814680A JP8814680A JPS5712484A JP S5712484 A JPS5712484 A JP S5712484A JP 8814680 A JP8814680 A JP 8814680A JP 8814680 A JP8814680 A JP 8814680A JP S5712484 A JPS5712484 A JP S5712484A
- Authority
- JP
- Japan
- Prior art keywords
- phi3
- potential
- discharge
- conduction
- shifted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
PURPOSE:To sufficiently ensure a write of 0V into a memory cell to increase the working margin of a dynamic RAM, by using the memory cell recharge pulse of the dynamic RAM for the discharge of a differential amplifier. CONSTITUTION:A transistor TR is shifted to a state of conduction by a clock phi to discharge the potential of the source phi3. On the other hand, a TR12 is shifted to a state of conduction by a control signal phi0' to discharge the potential of the source phi3. In this case, the potential of phi3 may possibly float up with a rise of the recharge pulse. To prevent this phenomenon, a TR13 is shifted to a state of conduction by a pulse phi4 to discharge the potential of phi3. As a result, the potential of phi3 never floats up but keeps 0V. Thus 0V can be written enough into a memory cell.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8814680A JPS5712484A (en) | 1980-06-26 | 1980-06-26 | Differential amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8814680A JPS5712484A (en) | 1980-06-26 | 1980-06-26 | Differential amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5712484A true JPS5712484A (en) | 1982-01-22 |
Family
ID=13934788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8814680A Pending JPS5712484A (en) | 1980-06-26 | 1980-06-26 | Differential amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712484A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63288496A (en) * | 1986-11-21 | 1988-11-25 | サムスン エレクトロニクス カンパニー リミテッド | Sensing amplifier for high performance dram |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52123849A (en) * | 1976-04-09 | 1977-10-18 | Nec Corp | Amplifier circuit |
JPS5316537A (en) * | 1976-06-01 | 1978-02-15 | Texas Instruments Inc | High speed circuit for mos random access memory |
JPS5461429A (en) * | 1977-10-26 | 1979-05-17 | Hitachi Ltd | Dynamic mis memory circuit |
-
1980
- 1980-06-26 JP JP8814680A patent/JPS5712484A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52123849A (en) * | 1976-04-09 | 1977-10-18 | Nec Corp | Amplifier circuit |
JPS5316537A (en) * | 1976-06-01 | 1978-02-15 | Texas Instruments Inc | High speed circuit for mos random access memory |
JPS5461429A (en) * | 1977-10-26 | 1979-05-17 | Hitachi Ltd | Dynamic mis memory circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63288496A (en) * | 1986-11-21 | 1988-11-25 | サムスン エレクトロニクス カンパニー リミテッド | Sensing amplifier for high performance dram |
JPH0462436B2 (en) * | 1986-11-21 | 1992-10-06 | Sansei Electronics Corp |
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