JPS5710984A - Photo sensor - Google Patents
Photo sensorInfo
- Publication number
- JPS5710984A JPS5710984A JP8502180A JP8502180A JPS5710984A JP S5710984 A JPS5710984 A JP S5710984A JP 8502180 A JP8502180 A JP 8502180A JP 8502180 A JP8502180 A JP 8502180A JP S5710984 A JPS5710984 A JP S5710984A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- amorphous semiconductor
- layers
- layer
- output signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a high output signal and to permit high-speed read by superimposing layers of an amorphous semiconductor material to form phototransistors wherein a photo signal is fed to a base layer region to fetch an output signal from an emitter or a collector. CONSTITUTION:A photo sensor 100 has a plurality of phototransistor structures (only two are shown in a drawing). Picture element electrodes 102 by a light permeable conductive material are formed with predetermined pattern and pitch on a transparent substrate 101 and emitter layers 3 composed of an N type amorphous semiconductor material and base layers 104 composed of a P type amorphous semiconductor material are formed on the electrodes 102. Furthermore, a belt-shaped collector layer 105 is stacked to cover each picture element base layer 4. An ohmic layer 106 and a common electrode 107 are formed on the layer 105. Shading layers 108 are provided between each element. The amorphous semiconductor material is Si or Ge containing hydrogen or halogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8502180A JPS5710984A (en) | 1980-06-23 | 1980-06-23 | Photo sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8502180A JPS5710984A (en) | 1980-06-23 | 1980-06-23 | Photo sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710984A true JPS5710984A (en) | 1982-01-20 |
| JPS6161541B2 JPS6161541B2 (en) | 1986-12-26 |
Family
ID=13847069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8502180A Granted JPS5710984A (en) | 1980-06-23 | 1980-06-23 | Photo sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710984A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61158426U (en) * | 1985-03-23 | 1986-10-01 |
-
1980
- 1980-06-23 JP JP8502180A patent/JPS5710984A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61158426U (en) * | 1985-03-23 | 1986-10-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161541B2 (en) | 1986-12-26 |
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