JPS57106160A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS57106160A JPS57106160A JP55181995A JP18199580A JPS57106160A JP S57106160 A JPS57106160 A JP S57106160A JP 55181995 A JP55181995 A JP 55181995A JP 18199580 A JP18199580 A JP 18199580A JP S57106160 A JPS57106160 A JP S57106160A
- Authority
- JP
- Japan
- Prior art keywords
- base
- diffused
- photo
- impurity concentration
- initial stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052796 boron Inorganic materials 0.000 abstract 3
- -1 Boron ions Chemical class 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the characteristics of noises, and to form the IC, dielectric resistance thereof does not decrease, by forming a base or an emitter through ion implantation two times and making an amplification factor of a transistor at the initial stage larger than that of other transistors. CONSTITUTION:A buried layer is diffused into a P<-> type Si substrate 1, and an N<-> type Si layer 2 is grown in an epitaxial shape. The surface is oxidized and B is diffused selectively using an SiO2 film shaped as a mask, and a P<+> isolation layer 4 is formed. The surface is etched, a new SiO2 film is molded, and the base section is window-opened through photo-resist treatment. Boron ions are implanted at first. A window opened section at the initial stage side is coated with a make by a photo-resist, etc., and Boron ions are implanted twice. Boron is stretched out and diffused, and the base 8a having low impurity concentration and the base 8b having high impurity concentration are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55181995A JPS57106160A (en) | 1980-12-24 | 1980-12-24 | Semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55181995A JPS57106160A (en) | 1980-12-24 | 1980-12-24 | Semiconductor integrated circuit device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106160A true JPS57106160A (en) | 1982-07-01 |
Family
ID=16110477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55181995A Pending JPS57106160A (en) | 1980-12-24 | 1980-12-24 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106160A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0342695A2 (en) * | 1988-05-20 | 1989-11-23 | Fujitsu Limited | Semiconductor device |
FR2677171A1 (en) * | 1991-05-31 | 1992-12-04 | Sgs Thomson Microelectronics | PREDETERMINED CURRENT GAIN TRANSISTOR IN AN INTEGRATED BIPOLAR CIRCUIT. |
-
1980
- 1980-12-24 JP JP55181995A patent/JPS57106160A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0342695A2 (en) * | 1988-05-20 | 1989-11-23 | Fujitsu Limited | Semiconductor device |
US5151765A (en) * | 1988-05-20 | 1992-09-29 | Fujitsu Limited | Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
FR2677171A1 (en) * | 1991-05-31 | 1992-12-04 | Sgs Thomson Microelectronics | PREDETERMINED CURRENT GAIN TRANSISTOR IN AN INTEGRATED BIPOLAR CIRCUIT. |
EP0517623A2 (en) * | 1991-05-31 | 1992-12-09 | STMicroelectronics S.A. | Transistor with a predetermined current gain in a bipolar integrated circuit |
EP0517623A3 (en) * | 1991-05-31 | 1994-08-10 | Sgs Thomson Microelectronics | Transistor with a predetermined current gain in a bipolar integrated circuit |
US5481132A (en) * | 1991-05-31 | 1996-01-02 | Sgs-Thomson Microelectronics S.A. | Transistor with a predetermined current gain in a bipolar integrated circuit |
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