JPS57106030A - Development of resist - Google Patents
Development of resistInfo
- Publication number
- JPS57106030A JPS57106030A JP18190680A JP18190680A JPS57106030A JP S57106030 A JPS57106030 A JP S57106030A JP 18190680 A JP18190680 A JP 18190680A JP 18190680 A JP18190680 A JP 18190680A JP S57106030 A JPS57106030 A JP S57106030A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- injection
- substrate
- resist
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To eliminate residual resist and improve the deficiency of fine pattern resolution, as well as enhance the quality of resist surface, by repeating an ON process to inject developer and to rotate a substrate and an OFF process where neither injection nor rotation is taken place. CONSTITUTION:The resist film coated on a substrate is exposed in accordance with a designated pattern. And then, the resist film is injected with developer, and the substrate is rotated to develop a designated pattern. At the same time, an ON process for injection of developer and rotation of the substrate, and an OFF process, where neither injection nor rotation is taken place, are repeated for a certain interval of time. This eliminates the residual resist and the deficiency of fine pattern resolution at the time of developer injection. This stabilizes the surface quality and reduces wasteful developer in use.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18190680A JPS57106030A (en) | 1980-12-24 | 1980-12-24 | Development of resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18190680A JPS57106030A (en) | 1980-12-24 | 1980-12-24 | Development of resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106030A true JPS57106030A (en) | 1982-07-01 |
Family
ID=16108950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18190680A Pending JPS57106030A (en) | 1980-12-24 | 1980-12-24 | Development of resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106030A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0483349A1 (en) * | 1990-05-18 | 1992-05-06 | Xinix, Inc. | Method for control of photoresist develop processes |
-
1980
- 1980-12-24 JP JP18190680A patent/JPS57106030A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0483349A1 (en) * | 1990-05-18 | 1992-05-06 | Xinix, Inc. | Method for control of photoresist develop processes |
US5292605A (en) * | 1990-05-18 | 1994-03-08 | Xinix, Inc. | Method for control of photoresist develop processes |
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