JPS57102027A - Processing of amorphous thin film - Google Patents

Processing of amorphous thin film

Info

Publication number
JPS57102027A
JPS57102027A JP55179445A JP17944580A JPS57102027A JP S57102027 A JPS57102027 A JP S57102027A JP 55179445 A JP55179445 A JP 55179445A JP 17944580 A JP17944580 A JP 17944580A JP S57102027 A JPS57102027 A JP S57102027A
Authority
JP
Japan
Prior art keywords
amorphous
plasma
thin film
hydrogen
amorphous thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55179445A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Shirou Moriyuki
Masatoshi Kitagawa
Shinichiro Ishihara
Masaharu Ono
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55179445A priority Critical patent/JPS57102027A/en
Publication of JPS57102027A publication Critical patent/JPS57102027A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve photoelectric characteristics of amorphous Si by a method wherein an amorphous thin film is processed by hydrogen gas in plasma generated by DC voltage as exciting source. CONSTITUTION:DC voltage of 1kV-2kV is applied between electrodes 12, 13. The electrode is heated to 300 deg.C-400 deg.C by a heater 14. Hydrogen gas is introduced by a gas introducing tube. Plasma 17 is generated between the parallel electrodes 12, 13 when a pressure in a guartz tube 11 becomes approximately 1Torr. The hydrogen ion accelerated by the cathode side electrode 13 of the plasma 17 is ion implanted into a surface of amorphous Si15 with an energy of order of 1keV. After that, as the temperature of the substrate is being risen, the hydrogen diffuses into the amorphous Si15.
JP55179445A 1980-12-17 1980-12-17 Processing of amorphous thin film Pending JPS57102027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55179445A JPS57102027A (en) 1980-12-17 1980-12-17 Processing of amorphous thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55179445A JPS57102027A (en) 1980-12-17 1980-12-17 Processing of amorphous thin film

Publications (1)

Publication Number Publication Date
JPS57102027A true JPS57102027A (en) 1982-06-24

Family

ID=16065978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55179445A Pending JPS57102027A (en) 1980-12-17 1980-12-17 Processing of amorphous thin film

Country Status (1)

Country Link
JP (1) JPS57102027A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123900A (en) * 1986-10-24 1988-05-27 シーメンス、アクチエンゲゼルシヤフト Inactivation of crystal defect or like
JPH04321277A (en) * 1991-04-19 1992-11-11 Sanyo Electric Co Ltd Formation of amorphous silicon thin film and manufacture of photoelectromotive device using the same
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
JP2009099924A (en) * 2007-10-17 2009-05-07 Ind Technol Res Inst Method of fast hydrogen passivation to solar cell made of crystalline silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123900A (en) * 1986-10-24 1988-05-27 シーメンス、アクチエンゲゼルシヤフト Inactivation of crystal defect or like
JPH04321277A (en) * 1991-04-19 1992-11-11 Sanyo Electric Co Ltd Formation of amorphous silicon thin film and manufacture of photoelectromotive device using the same
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
JP2009099924A (en) * 2007-10-17 2009-05-07 Ind Technol Res Inst Method of fast hydrogen passivation to solar cell made of crystalline silicon

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