JPS57100998A - Device for forming highly uniform epitaxial film - Google Patents
Device for forming highly uniform epitaxial filmInfo
- Publication number
- JPS57100998A JPS57100998A JP14482781A JP14482781A JPS57100998A JP S57100998 A JPS57100998 A JP S57100998A JP 14482781 A JP14482781 A JP 14482781A JP 14482781 A JP14482781 A JP 14482781A JP S57100998 A JPS57100998 A JP S57100998A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial film
- highly uniform
- forming highly
- uniform epitaxial
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18765380A | 1980-09-16 | 1980-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57100998A true JPS57100998A (en) | 1982-06-23 |
Family
ID=22689889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14482781A Pending JPS57100998A (en) | 1980-09-16 | 1981-09-16 | Device for forming highly uniform epitaxial film |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57100998A (en) |
FR (1) | FR2490250A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6191094A (en) * | 1984-10-11 | 1986-05-09 | Fujitsu Ltd | Device for crystal growth with molecular beam |
JPS6212694A (en) * | 1985-07-10 | 1987-01-21 | Anelva Corp | Molecular beam epitaxial growth apparatus |
JPS6255919A (en) * | 1985-09-05 | 1987-03-11 | Fujitsu Ltd | Molecular beam crystal growth device |
JP2010121215A (en) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | Deposition apparatus and deposition method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3310044A1 (en) * | 1983-03-19 | 1984-09-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | METHOD AND ARRANGEMENT FOR COATING A SUBSTRATE |
FR2623819A1 (en) * | 1987-11-26 | 1989-06-02 | Thomson Csf | Electron bombardment oven for vacuum evaporation |
DE59009909D1 (en) * | 1989-04-19 | 1996-01-11 | Siemens Ag | Device with a crucible in an effusion cell of a molecular beam epitaxy system. |
-
1981
- 1981-09-14 FR FR8117298A patent/FR2490250A1/en not_active Withdrawn
- 1981-09-16 JP JP14482781A patent/JPS57100998A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6191094A (en) * | 1984-10-11 | 1986-05-09 | Fujitsu Ltd | Device for crystal growth with molecular beam |
JPS6212694A (en) * | 1985-07-10 | 1987-01-21 | Anelva Corp | Molecular beam epitaxial growth apparatus |
JPH037638B2 (en) * | 1985-07-10 | 1991-02-04 | Anelva Corp | |
JPS6255919A (en) * | 1985-09-05 | 1987-03-11 | Fujitsu Ltd | Molecular beam crystal growth device |
JP2010121215A (en) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | Deposition apparatus and deposition method |
Also Published As
Publication number | Publication date |
---|---|
FR2490250A1 (en) | 1982-03-19 |
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