JPS57100998A - Device for forming highly uniform epitaxial film - Google Patents

Device for forming highly uniform epitaxial film

Info

Publication number
JPS57100998A
JPS57100998A JP14482781A JP14482781A JPS57100998A JP S57100998 A JPS57100998 A JP S57100998A JP 14482781 A JP14482781 A JP 14482781A JP 14482781 A JP14482781 A JP 14482781A JP S57100998 A JPS57100998 A JP S57100998A
Authority
JP
Japan
Prior art keywords
epitaxial film
highly uniform
forming highly
uniform epitaxial
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14482781A
Other languages
Japanese (ja)
Inventor
Sento Kurea Nodoru Uorutaa
Aanesuto Ratsushiyaa Pooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS57100998A publication Critical patent/JPS57100998A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/06Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14482781A 1980-09-16 1981-09-16 Device for forming highly uniform epitaxial film Pending JPS57100998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18765380A 1980-09-16 1980-09-16

Publications (1)

Publication Number Publication Date
JPS57100998A true JPS57100998A (en) 1982-06-23

Family

ID=22689889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14482781A Pending JPS57100998A (en) 1980-09-16 1981-09-16 Device for forming highly uniform epitaxial film

Country Status (2)

Country Link
JP (1) JPS57100998A (en)
FR (1) FR2490250A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191094A (en) * 1984-10-11 1986-05-09 Fujitsu Ltd Device for crystal growth with molecular beam
JPS6212694A (en) * 1985-07-10 1987-01-21 Anelva Corp Molecular beam epitaxial growth apparatus
JPS6255919A (en) * 1985-09-05 1987-03-11 Fujitsu Ltd Molecular beam crystal growth device
JP2010121215A (en) * 2010-01-14 2010-06-03 Semiconductor Energy Lab Co Ltd Deposition apparatus and deposition method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (en) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD AND ARRANGEMENT FOR COATING A SUBSTRATE
FR2623819A1 (en) * 1987-11-26 1989-06-02 Thomson Csf Electron bombardment oven for vacuum evaporation
DE59009909D1 (en) * 1989-04-19 1996-01-11 Siemens Ag Device with a crucible in an effusion cell of a molecular beam epitaxy system.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191094A (en) * 1984-10-11 1986-05-09 Fujitsu Ltd Device for crystal growth with molecular beam
JPS6212694A (en) * 1985-07-10 1987-01-21 Anelva Corp Molecular beam epitaxial growth apparatus
JPH037638B2 (en) * 1985-07-10 1991-02-04 Anelva Corp
JPS6255919A (en) * 1985-09-05 1987-03-11 Fujitsu Ltd Molecular beam crystal growth device
JP2010121215A (en) * 2010-01-14 2010-06-03 Semiconductor Energy Lab Co Ltd Deposition apparatus and deposition method

Also Published As

Publication number Publication date
FR2490250A1 (en) 1982-03-19

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