JPS57100774A - Semiconductor luminous device - Google Patents
Semiconductor luminous deviceInfo
- Publication number
- JPS57100774A JPS57100774A JP17775380A JP17775380A JPS57100774A JP S57100774 A JPS57100774 A JP S57100774A JP 17775380 A JP17775380 A JP 17775380A JP 17775380 A JP17775380 A JP 17775380A JP S57100774 A JPS57100774 A JP S57100774A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- zasz
- xgaxp1
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004040 coloring Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor material stably emitting light of a visible ray region by a method wherein a clad layer consisting of AlxGa1-xAs1-y'Py' is formed on a GaAs1-yPy substrate by adjoining an active layer consisting of In1-xGAxP1-zAsz. CONSTITUTION:Epitaxial growth is consecutively applied to the first layer N type Alx'Ga1-x'As1-y'Py' layer 3, the second layer non-dope In1-xGaxP1-zAsz layer 2, the third layer P-type Alx'Ga1-x'As1-y'Py' layer, and a layer 4 on an N type CaAS0.62P0.38 substrate 1. In this way, an LED or a semiconductor laser made of a hetero-junction structure material and having coloring of red-yellow can be obtained. this process, it is preferable to use Cu in an amount of 2-10wt%, based on the
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17775380A JPS57100774A (en) | 1980-12-15 | 1980-12-15 | Semiconductor luminous device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17775380A JPS57100774A (en) | 1980-12-15 | 1980-12-15 | Semiconductor luminous device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57100774A true JPS57100774A (en) | 1982-06-23 |
Family
ID=16036517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17775380A Pending JPS57100774A (en) | 1980-12-15 | 1980-12-15 | Semiconductor luminous device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100774A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
-
1980
- 1980-12-15 JP JP17775380A patent/JPS57100774A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
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