JPS57100774A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS57100774A
JPS57100774A JP17775380A JP17775380A JPS57100774A JP S57100774 A JPS57100774 A JP S57100774A JP 17775380 A JP17775380 A JP 17775380A JP 17775380 A JP17775380 A JP 17775380A JP S57100774 A JPS57100774 A JP S57100774A
Authority
JP
Japan
Prior art keywords
layer
type
zasz
xgaxp1
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17775380A
Other languages
Japanese (ja)
Inventor
Akira Fujimoto
Mikihiko Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP17775380A priority Critical patent/JPS57100774A/en
Publication of JPS57100774A publication Critical patent/JPS57100774A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor material stably emitting light of a visible ray region by a method wherein a clad layer consisting of AlxGa1-xAs1-y'Py' is formed on a GaAs1-yPy substrate by adjoining an active layer consisting of In1-xGAxP1-zAsz. CONSTITUTION:Epitaxial growth is consecutively applied to the first layer N type Alx'Ga1-x'As1-y'Py' layer 3, the second layer non-dope In1-xGaxP1-zAsz layer 2, the third layer P-type Alx'Ga1-x'As1-y'Py' layer, and a layer 4 on an N type CaAS0.62P0.38 substrate 1. In this way, an LED or a semiconductor laser made of a hetero-junction structure material and having coloring of red-yellow can be obtained. this process, it is preferable to use Cu in an amount of 2-10wt%, based on the
JP17775380A 1980-12-15 1980-12-15 Semiconductor luminous device Pending JPS57100774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17775380A JPS57100774A (en) 1980-12-15 1980-12-15 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17775380A JPS57100774A (en) 1980-12-15 1980-12-15 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS57100774A true JPS57100774A (en) 1982-06-23

Family

ID=16036517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17775380A Pending JPS57100774A (en) 1980-12-15 1980-12-15 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS57100774A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

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