JPS57100746A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57100746A
JPS57100746A JP17682480A JP17682480A JPS57100746A JP S57100746 A JPS57100746 A JP S57100746A JP 17682480 A JP17682480 A JP 17682480A JP 17682480 A JP17682480 A JP 17682480A JP S57100746 A JPS57100746 A JP S57100746A
Authority
JP
Japan
Prior art keywords
mos
channel mos
basic cell
integrated circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17682480A
Other languages
Japanese (ja)
Other versions
JPH0475664B2 (en
Inventor
Teruo Kobayashi
Haruyuki Tago
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17682480A priority Critical patent/JPS57100746A/en
Publication of JPS57100746A publication Critical patent/JPS57100746A/en
Publication of JPH0475664B2 publication Critical patent/JPH0475664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a gate array having high utility rate by commonly using two N-MOS sources and two P-MOS drains and connecting one N-MOS gate and one P-MOS gate in a basic cell. CONSTITUTION:The sources or drain regions 6 of n-channel MOS transistors TR1, TR2 are commonly used, the drain or source regions 9 of p-channel MOS transistors TR3, TR4 are commonly used, and the gates 1, 3 of n-channel MOS transistor TR1 and p-channel MOS transistor TR3 are connected in circuit as a basic cell of a gate array large scale integrated circuit by master-slice type. When such basic cell is used, almost logic functions can be performed merely by altering the connection layout of the metallic wiring layer, thereby efficiently forming the logic circuit.
JP17682480A 1980-12-15 1980-12-15 Semiconductor integrated circuit device Granted JPS57100746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17682480A JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17682480A JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57100746A true JPS57100746A (en) 1982-06-23
JPH0475664B2 JPH0475664B2 (en) 1992-12-01

Family

ID=16020477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17682480A Granted JPS57100746A (en) 1980-12-15 1980-12-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57100746A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139549A (en) * 1984-07-30 1986-02-25 Hitachi Ltd Semiconductor integrated circuit device
US4668972A (en) * 1983-08-26 1987-05-26 Fujitsu Limited Masterslice semiconductor device
JPS62200756A (en) * 1986-02-28 1987-09-04 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device
US5436485A (en) * 1991-07-18 1995-07-25 Fujitsu Limited Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
JPH08124857A (en) * 1994-10-20 1996-05-17 Nec Corp Sputtering device and manufacture of semiconductor by use of it

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668972A (en) * 1983-08-26 1987-05-26 Fujitsu Limited Masterslice semiconductor device
JPS6139549A (en) * 1984-07-30 1986-02-25 Hitachi Ltd Semiconductor integrated circuit device
JPS62200756A (en) * 1986-02-28 1987-09-04 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device
US5436485A (en) * 1991-07-18 1995-07-25 Fujitsu Limited Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
JPH08124857A (en) * 1994-10-20 1996-05-17 Nec Corp Sputtering device and manufacture of semiconductor by use of it

Also Published As

Publication number Publication date
JPH0475664B2 (en) 1992-12-01

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