JPS57100746A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57100746A JPS57100746A JP17682480A JP17682480A JPS57100746A JP S57100746 A JPS57100746 A JP S57100746A JP 17682480 A JP17682480 A JP 17682480A JP 17682480 A JP17682480 A JP 17682480A JP S57100746 A JPS57100746 A JP S57100746A
- Authority
- JP
- Japan
- Prior art keywords
- mos
- channel mos
- basic cell
- integrated circuit
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a gate array having high utility rate by commonly using two N-MOS sources and two P-MOS drains and connecting one N-MOS gate and one P-MOS gate in a basic cell. CONSTITUTION:The sources or drain regions 6 of n-channel MOS transistors TR1, TR2 are commonly used, the drain or source regions 9 of p-channel MOS transistors TR3, TR4 are commonly used, and the gates 1, 3 of n-channel MOS transistor TR1 and p-channel MOS transistor TR3 are connected in circuit as a basic cell of a gate array large scale integrated circuit by master-slice type. When such basic cell is used, almost logic functions can be performed merely by altering the connection layout of the metallic wiring layer, thereby efficiently forming the logic circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17682480A JPS57100746A (en) | 1980-12-15 | 1980-12-15 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17682480A JPS57100746A (en) | 1980-12-15 | 1980-12-15 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57100746A true JPS57100746A (en) | 1982-06-23 |
JPH0475664B2 JPH0475664B2 (en) | 1992-12-01 |
Family
ID=16020477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17682480A Granted JPS57100746A (en) | 1980-12-15 | 1980-12-15 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100746A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6139549A (en) * | 1984-07-30 | 1986-02-25 | Hitachi Ltd | Semiconductor integrated circuit device |
US4668972A (en) * | 1983-08-26 | 1987-05-26 | Fujitsu Limited | Masterslice semiconductor device |
JPS62200756A (en) * | 1986-02-28 | 1987-09-04 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit |
US5136356A (en) * | 1989-04-19 | 1992-08-04 | Seiko Epson Corporation | Semiconductor device |
US5436485A (en) * | 1991-07-18 | 1995-07-25 | Fujitsu Limited | Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device |
JPH08124857A (en) * | 1994-10-20 | 1996-05-17 | Nec Corp | Sputtering device and manufacture of semiconductor by use of it |
-
1980
- 1980-12-15 JP JP17682480A patent/JPS57100746A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668972A (en) * | 1983-08-26 | 1987-05-26 | Fujitsu Limited | Masterslice semiconductor device |
JPS6139549A (en) * | 1984-07-30 | 1986-02-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS62200756A (en) * | 1986-02-28 | 1987-09-04 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit |
US5136356A (en) * | 1989-04-19 | 1992-08-04 | Seiko Epson Corporation | Semiconductor device |
US5436485A (en) * | 1991-07-18 | 1995-07-25 | Fujitsu Limited | Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device |
JPH08124857A (en) * | 1994-10-20 | 1996-05-17 | Nec Corp | Sputtering device and manufacture of semiconductor by use of it |
Also Published As
Publication number | Publication date |
---|---|
JPH0475664B2 (en) | 1992-12-01 |
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