JPS5693350A - Armor of semiconductor device - Google Patents
Armor of semiconductor deviceInfo
- Publication number
- JPS5693350A JPS5693350A JP17370079A JP17370079A JPS5693350A JP S5693350 A JPS5693350 A JP S5693350A JP 17370079 A JP17370079 A JP 17370079A JP 17370079 A JP17370079 A JP 17370079A JP S5693350 A JPS5693350 A JP S5693350A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- overvoltage
- substance
- terminals
- outside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE:To protect IC by a method wherein a substance which absorbs and reduces an overvoltage from the outside is inserted between a terminals and ground or terminals. CONSTITUTION:A diode 4 is surrounded by a primary protective layer 3, then covered on the whole with a metal oxide compound or a resistive substance 2 having a suitable conductivity, and furthermore, coated with an electrical insulator 1 such as plastics permitting electricity to be commutated and glass. The layer 3 is chemically inactive and prevents an element 4 from being influenced from the outside and is formed for specical use. Terminals 4a, 4b are attached to the element and led to the outside through layer 1-3. Otherwise, a terminal 5 is allowed to be let out of the layer 2. If the overvoltage is applied, the protective layer 2 absrobs and reduces the same so that the element 4 is not influenced inside. When the excess voltage is removed, the layer 2 returns to be in the original state and all energies of the overvoltage effect increase of a temperature of the substance. A well-known substance having ZnO, SiC as the principal component is used. With this strcuture, a device of a large overvoltage withstand value can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17370079A JPS5693350A (en) | 1979-12-26 | 1979-12-26 | Armor of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17370079A JPS5693350A (en) | 1979-12-26 | 1979-12-26 | Armor of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5693350A true JPS5693350A (en) | 1981-07-28 |
Family
ID=15965494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17370079A Pending JPS5693350A (en) | 1979-12-26 | 1979-12-26 | Armor of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5693350A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01273344A (en) * | 1988-04-25 | 1989-11-01 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPH03102747U (en) * | 1990-02-09 | 1991-10-25 | ||
CN105552056A (en) * | 2016-02-03 | 2016-05-04 | 泰州优宾晶圆科技有限公司 | Silver-faced high-voltage planar MOS schottky diode |
-
1979
- 1979-12-26 JP JP17370079A patent/JPS5693350A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01273344A (en) * | 1988-04-25 | 1989-11-01 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPH03102747U (en) * | 1990-02-09 | 1991-10-25 | ||
CN105552056A (en) * | 2016-02-03 | 2016-05-04 | 泰州优宾晶圆科技有限公司 | Silver-faced high-voltage planar MOS schottky diode |
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