JPS5693316A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5693316A
JPS5693316A JP17002279A JP17002279A JPS5693316A JP S5693316 A JPS5693316 A JP S5693316A JP 17002279 A JP17002279 A JP 17002279A JP 17002279 A JP17002279 A JP 17002279A JP S5693316 A JPS5693316 A JP S5693316A
Authority
JP
Japan
Prior art keywords
film
substrate
electrode
wirings
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17002279A
Other languages
Japanese (ja)
Other versions
JPS6152566B2 (en
Inventor
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17002279A priority Critical patent/JPS5693316A/en
Publication of JPS5693316A publication Critical patent/JPS5693316A/en
Publication of JPS6152566B2 publication Critical patent/JPS6152566B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To dispence with a positioning allowance by a method wherein an electrode and a wiring are formed using the photoresist film pattern which was used for forming an electrode window in the condition as it is. CONSTITUTION:A negative type photoresist type films 11 and 11' are selectively formed on the Si2 film 4 to be used for covering the surface of the Si substrate 1 whereon each region was formed. Then a positive type resist film 12 is selectively formed and apertures 13, 13' and 13'' are provided on the portions where the electrodes and wirings of a base, an emitter and a collector are to be formed. Then the substrate 1 is exposed to an HF atmosphere in the decompressed state of condition and the SiO2 film exposed on the surface of the 13-13'' sections is removed. Next, the films 11-11'' remained in the electrode windows is removed and the Si substrate at electrode windows 14-14'' is removed. Then a conductive film is coated on the whole surface of the substrate 1, the film 12 and the remaining film 11 are removed, the conductive film to be coated on the film 12 is removed and the electrodes and wirings 15, 15' and 15'' of the base, emitter and collector are formed. As a result, the electrodes and wirings are formed in a self-matching manner with the electrode windows, thereby allowing to dispense with a positioning allowance.
JP17002279A 1979-12-26 1979-12-26 Manufacture of semiconductor device Granted JPS5693316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17002279A JPS5693316A (en) 1979-12-26 1979-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17002279A JPS5693316A (en) 1979-12-26 1979-12-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5693316A true JPS5693316A (en) 1981-07-28
JPS6152566B2 JPS6152566B2 (en) 1986-11-13

Family

ID=15897141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17002279A Granted JPS5693316A (en) 1979-12-26 1979-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5693316A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4895292B2 (en) * 2004-01-13 2012-03-14 フラーペ ベール エセ アー Automobile air conditioner expansion valve fixing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4895292B2 (en) * 2004-01-13 2012-03-14 フラーペ ベール エセ アー Automobile air conditioner expansion valve fixing device

Also Published As

Publication number Publication date
JPS6152566B2 (en) 1986-11-13

Similar Documents

Publication Publication Date Title
JPS5643749A (en) Semiconductor device and its manufacture
JPS5693316A (en) Manufacture of semiconductor device
JPS6472567A (en) Manufacture of semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS57167659A (en) Manufacture of semiconductor device
JPS5753941A (en) Semiconductor device
JPS56130925A (en) Manufacture of semiconductor device
JPS5732653A (en) Manufacture of semiconductor device
JPS56115566A (en) Manufacture of mos semiconductor device
JPS5693331A (en) Manufacture of semiconductor device
JPS55123162A (en) Manufacture of semiconductor device
JPS57206049A (en) Manufacture of semiconductor device
JPS5610923A (en) Preparation of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS575329A (en) Manufacture of semiconductor device
JPS5530830A (en) Method of forming pattern in semiconductor device
JPS5570835A (en) Photoresist material and etching method
JPS57159028A (en) Manufacture of semiconductor device
JPS56105673A (en) Semiconductor device
JPS55134932A (en) Preparation of semiconductor device
JPS5698832A (en) Preparation of semiconductor device
JPS56130961A (en) Manufacture of semiconductor device
JPS5642355A (en) Manufacture of semiconductor device
JPS57136366A (en) Manufacture of semiconductor device
JPS5661156A (en) Preparation of semiconductor resistor