JPS5685842A - Semiconductor device having heat dissipating fin - Google Patents

Semiconductor device having heat dissipating fin

Info

Publication number
JPS5685842A
JPS5685842A JP16153479A JP16153479A JPS5685842A JP S5685842 A JPS5685842 A JP S5685842A JP 16153479 A JP16153479 A JP 16153479A JP 16153479 A JP16153479 A JP 16153479A JP S5685842 A JPS5685842 A JP S5685842A
Authority
JP
Japan
Prior art keywords
stud
heat dissipating
dissipating fins
ceramic
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16153479A
Other languages
Japanese (ja)
Inventor
Kanji Otsuka
Masao Sekihashi
Michiaki Furukawa
Satoshi Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16153479A priority Critical patent/JPS5685842A/en
Publication of JPS5685842A publication Critical patent/JPS5685842A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To secure the reliability of the mounting portion of a semiconductor device having heat dissipating fins by soldering the stud of the heat dissipating fins through a hard metal thin layer having similar heat expansion coefficient to ceramic on a soft metal layer having high thermal conductivity on the outer wall of a semiconductor container. CONSTITUTION:A hard metal plate 3 of Mo or W is placed on a soft metal thin plate 2 of pure copper or pure silver having a preferable thermal conductivity to match a stress, and a stud 4 of copper or pure silver is soldered at 9a-9c with eutectic silver. Since the thermal stress between a brittle ceramic and the stud of different type material therefrom is alleviated and absorbed by the layers 2 and 3 when the stud 4 is mounted on a ceramic substrate 1 to which lead wires 15 are welded at 13 with this configuration, the ceramic substrate cannot be destroyed and the heat dissipating fins 5 having low cost, high performance and high reliability can be really mounted.
JP16153479A 1979-12-14 1979-12-14 Semiconductor device having heat dissipating fin Pending JPS5685842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16153479A JPS5685842A (en) 1979-12-14 1979-12-14 Semiconductor device having heat dissipating fin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16153479A JPS5685842A (en) 1979-12-14 1979-12-14 Semiconductor device having heat dissipating fin

Publications (1)

Publication Number Publication Date
JPS5685842A true JPS5685842A (en) 1981-07-13

Family

ID=15736918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16153479A Pending JPS5685842A (en) 1979-12-14 1979-12-14 Semiconductor device having heat dissipating fin

Country Status (1)

Country Link
JP (1) JPS5685842A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188145A (en) * 1982-04-28 1983-11-02 Fujitsu Ltd Semiconductor device
JPS59178755A (en) * 1983-03-29 1984-10-11 Nec Corp Semiconductor with built-in heat sink
US5567985A (en) * 1994-07-25 1996-10-22 General Electric Company Electronic apparatus with compliant metal chip-substrate bonding layer(s)
US7311140B2 (en) * 2000-02-01 2007-12-25 Cool Options, Inc. Heat sink assembly with overmolded carbon matrix
US7443683B2 (en) * 2004-11-19 2008-10-28 Hewlett-Packard Development Company, L.P. Cooling apparatus for electronic devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188145A (en) * 1982-04-28 1983-11-02 Fujitsu Ltd Semiconductor device
JPS59178755A (en) * 1983-03-29 1984-10-11 Nec Corp Semiconductor with built-in heat sink
US5567985A (en) * 1994-07-25 1996-10-22 General Electric Company Electronic apparatus with compliant metal chip-substrate bonding layer(s)
US7311140B2 (en) * 2000-02-01 2007-12-25 Cool Options, Inc. Heat sink assembly with overmolded carbon matrix
US7443683B2 (en) * 2004-11-19 2008-10-28 Hewlett-Packard Development Company, L.P. Cooling apparatus for electronic devices

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