JPS5680106A - (110) garnet liquid phase epitaxial film - Google Patents

(110) garnet liquid phase epitaxial film

Info

Publication number
JPS5680106A
JPS5680106A JP15833479A JP15833479A JPS5680106A JP S5680106 A JPS5680106 A JP S5680106A JP 15833479 A JP15833479 A JP 15833479A JP 15833479 A JP15833479 A JP 15833479A JP S5680106 A JPS5680106 A JP S5680106A
Authority
JP
Japan
Prior art keywords
garnet
film
liquid phase
phase epitaxial
epitaxial film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15833479A
Other languages
Japanese (ja)
Other versions
JPS6148763B2 (en
Inventor
Taketoshi Hibiya
Hiroshi Makino
Hiroko Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15833479A priority Critical patent/JPS5680106A/en
Publication of JPS5680106A publication Critical patent/JPS5680106A/en
Publication of JPS6148763B2 publication Critical patent/JPS6148763B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain a film having orthorhombic anisotropy with magnetization enabling axis in vertical direction in the film surface by growing specific composition garnet liquid phase epitaxial film from molten liquid containing PbO and Bi2O3 as main ingredients. CONSTITUTION:Garnet liquid phase epitaxial film having growing plane in (110) plane and exhibiting with (Y1-xTmx)3-yBiyFe5-8(Ga1-wAlw)2O12 (where 0<= x<=1, 0.05<=y<=0.7, 0.9<=z<=1.35, 0<=w<=1) grown from molten liquid containing essentially PbO and Bi2O3 is formed on the nonmagnetic garnet of R3Ga5O12 (R represents Sm, Gd, Dy or the like) in composition. For instance, Y1.3Tm1.3Bi0.4 Fe3.7Ga1.3O12 garnet LPE film is grown from predetermined flux at temperature of 865 deg.C on (110) Gd3Ga5O12 substrate, thereby obtainingorthorhombic anitotripic bubble material having magnetization enabling axis in (110) vertical to the film surface.
JP15833479A 1979-12-06 1979-12-06 (110) garnet liquid phase epitaxial film Granted JPS5680106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15833479A JPS5680106A (en) 1979-12-06 1979-12-06 (110) garnet liquid phase epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15833479A JPS5680106A (en) 1979-12-06 1979-12-06 (110) garnet liquid phase epitaxial film

Publications (2)

Publication Number Publication Date
JPS5680106A true JPS5680106A (en) 1981-07-01
JPS6148763B2 JPS6148763B2 (en) 1986-10-25

Family

ID=15669365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15833479A Granted JPS5680106A (en) 1979-12-06 1979-12-06 (110) garnet liquid phase epitaxial film

Country Status (1)

Country Link
JP (1) JPS5680106A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265809A (en) * 1985-05-20 1986-11-25 Sony Corp Bismuth-substituted magnetic garnet
JPS61265810A (en) * 1985-05-20 1986-11-25 Sony Corp Bismuth-substituted magnetic garnet
JPH02168606A (en) * 1988-09-30 1990-06-28 Shin Etsu Chem Co Ltd Oxide garnet single crystal and microwave element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220009523A (en) 2020-07-15 2022-01-25 삼성전자주식회사 Storage controller, and operation mehtod of storage controller

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265809A (en) * 1985-05-20 1986-11-25 Sony Corp Bismuth-substituted magnetic garnet
JPS61265810A (en) * 1985-05-20 1986-11-25 Sony Corp Bismuth-substituted magnetic garnet
JPH02168606A (en) * 1988-09-30 1990-06-28 Shin Etsu Chem Co Ltd Oxide garnet single crystal and microwave element

Also Published As

Publication number Publication date
JPS6148763B2 (en) 1986-10-25

Similar Documents

Publication Publication Date Title
JPS5680106A (en) (110) garnet liquid phase epitaxial film
JPS6034806B2 (en) Magnetic structure for magnetic bubble
JPS56155515A (en) Magnetic garnet film and manufacture
JPS5642311A (en) Garnet film for magnetic bubble
JPS5659695A (en) Manufacture of oxide epitaxial film
JPS5578515A (en) Manufacture of magnetic bubble element
GB1367123A (en) Method for producing bubble domains in magnetic film-substrate structures
Moriceau et al. Properties of 2 mum bubbles garnet films
Plaskett et al. The Effect of Substrate Orientation and Growth Temperature on the Magnetic Anisotropy of Eu x Y 3− x Fe 5 O 12 Films
JPS57205398A (en) Liquid phase epitaxial garnet film
JPS56122110A (en) (110) garnet liquid phase epitaxial film
JPS5555503A (en) Garnet film for magnetic bubble element
JP3089742B2 (en) Materials for magnetostatic wave devices
JPS55108990A (en) Production of magnetic bubble material
JPH0288430A (en) Magneto-optical garnet
JPS6454719A (en) Liquid phase epitaxial growth method
JPS5445794A (en) Manufacture of magnetic garnet film for magnetic bubble medium
JPS5522860A (en) Manufacturing method of single crystal ferrite
JPS5694610A (en) Liquid-phase epitaxial film of (110) garnet
JPS5522808A (en) Garnet compound film for bubble magnetic zone element
GB1386856A (en) Growing epitaxial layers
JPS5779605A (en) Melt component of bubble domain garnet
JPS55142481A (en) Manufacture of magnetic bubble material
JPS5645895A (en) Growing method of garnet liquid phase epitaxial film
JPS5518095A (en) Cilindrical magnetic domain element