JPS5679479A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS5679479A
JPS5679479A JP15664079A JP15664079A JPS5679479A JP S5679479 A JPS5679479 A JP S5679479A JP 15664079 A JP15664079 A JP 15664079A JP 15664079 A JP15664079 A JP 15664079A JP S5679479 A JPS5679479 A JP S5679479A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
electrode
work function
type
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15664079A
Other languages
Japanese (ja)
Other versions
JPH0230190B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15664079A priority Critical patent/JPS5679479A/en
Publication of JPS5679479A publication Critical patent/JPS5679479A/en
Publication of JPH0230190B2 publication Critical patent/JPH0230190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Abstract

PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via an insulating or semi-insulating film thereby differentiating a work function or a conductive type. CONSTITUTION:An insulating film of Si3N4, SiO2 or the like forms a semiconductive film of a lower nitride or oxide such as Si3N4-X, SiO2-X or the like on a dope or nondope Si-substrate. A positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si-layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si-layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, the generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases.
JP15664079A 1979-12-03 1979-12-03 Photoelectric conversion device Granted JPS5679479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15664079A JPS5679479A (en) 1979-12-03 1979-12-03 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15664079A JPS5679479A (en) 1979-12-03 1979-12-03 Photoelectric conversion device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3728580A Division JPS5679477A (en) 1980-03-24 1980-03-24 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS5679479A true JPS5679479A (en) 1981-06-30
JPH0230190B2 JPH0230190B2 (en) 1990-07-04

Family

ID=15632076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15664079A Granted JPS5679479A (en) 1979-12-03 1979-12-03 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS5679479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190476A (en) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd Photovoltaic device
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and preparation thereof
WO2011023603A3 (en) * 2009-08-24 2011-11-03 International Business Machines Corporation Single and few-layer graphene based photodetecting devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04115388U (en) * 1991-03-20 1992-10-13 アイワ株式会社 Recording real time display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190476A (en) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd Photovoltaic device
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and preparation thereof
WO2011023603A3 (en) * 2009-08-24 2011-11-03 International Business Machines Corporation Single and few-layer graphene based photodetecting devices

Also Published As

Publication number Publication date
JPH0230190B2 (en) 1990-07-04

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