JPS567470A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS567470A JPS567470A JP8320879A JP8320879A JPS567470A JP S567470 A JPS567470 A JP S567470A JP 8320879 A JP8320879 A JP 8320879A JP 8320879 A JP8320879 A JP 8320879A JP S567470 A JPS567470 A JP S567470A
- Authority
- JP
- Japan
- Prior art keywords
- recessions
- recession
- mesa
- level difference
- subjected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000007547 defect Effects 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To convert growing laminate defects into transition loops at cross points of the level differences and cause these defects to vanish thereby to improve the element characteristics by providing intentionally minute recessions in which the level difference direction intersects the <110> direction on the element forming surface of a semiconductor substrate. CONSTITUTION:An Si wafer 10 is subjected to mechanical and chemical grinding, thereby to obtain a surface free of residual strain, projections and recessions. The thus obtained element forming surface is subjected to photolithography and etching using a gridlike etching mask to form a number of checkerslike minute recessions 11. Upon this occasion, the length l of the recession 11 is about 50mum or less, and its lower limit is equal to the limit of the photoprocess of about 1mum, and the height of mesa 12 positioned between the recessions 11 is about 1,000Angstrom . At the same time, the direction of the level difference between the recession 11 and the mesa 12 or that of the side 13 is made parallel to the direction rectangular to at least one direction of (110> directions. Accordingly, when a laminate defect 14 produced at a point A within the recession 11 has reached a point A' below the level difference 13, it cannot rise up to the mesa, and vanishes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8320879A JPS567470A (en) | 1979-06-29 | 1979-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8320879A JPS567470A (en) | 1979-06-29 | 1979-06-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS567470A true JPS567470A (en) | 1981-01-26 |
Family
ID=13795897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8320879A Pending JPS567470A (en) | 1979-06-29 | 1979-06-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS567470A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6228084A (en) * | 1985-07-30 | 1987-02-06 | Akira Kanekawa | Plasma jet torch |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939865A (en) * | 1972-08-25 | 1974-04-13 | ||
JPS5114868A (en) * | 1974-07-30 | 1976-02-05 | Furukawa Electric Co Ltd | Namitsukidohakanno seikeisochi |
JPS5114869A (en) * | 1974-07-30 | 1976-02-05 | Furukawa Electric Co Ltd | Namitsukidohakanno seikeihoho |
JPS5440575A (en) * | 1977-09-07 | 1979-03-30 | Fujitsu Ltd | Semiconductor device |
-
1979
- 1979-06-29 JP JP8320879A patent/JPS567470A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939865A (en) * | 1972-08-25 | 1974-04-13 | ||
JPS5114868A (en) * | 1974-07-30 | 1976-02-05 | Furukawa Electric Co Ltd | Namitsukidohakanno seikeisochi |
JPS5114869A (en) * | 1974-07-30 | 1976-02-05 | Furukawa Electric Co Ltd | Namitsukidohakanno seikeihoho |
JPS5440575A (en) * | 1977-09-07 | 1979-03-30 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6228084A (en) * | 1985-07-30 | 1987-02-06 | Akira Kanekawa | Plasma jet torch |
JPH038872B2 (en) * | 1985-07-30 | 1991-02-07 | Akira Kanekawa |
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