JPS5673463A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5673463A JPS5673463A JP15092779A JP15092779A JPS5673463A JP S5673463 A JPS5673463 A JP S5673463A JP 15092779 A JP15092779 A JP 15092779A JP 15092779 A JP15092779 A JP 15092779A JP S5673463 A JPS5673463 A JP S5673463A
- Authority
- JP
- Japan
- Prior art keywords
- region
- depth
- conduction type
- diffusion
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003321 amplification Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To uniformalize current distribution along the electrode length direction, eliminate the concentration of currents and increase output by a method wherein the lowering of voltage between an emitter and a base along the electrode length direction is compensated by the increase of current amplification in a bipolar transistor with a gate. CONSTITUTION:An opposite conduction type base region 3 is diffusion-formed to one conduction type semiconductor substrate 5 functioning as a collector region, and deep gate regions 8 in the same conduction type as the region 3 are made up at the both sides. An emitter region 1 in the same conduction type as the substrate 5 is diffusion-formed to a central surface of the region 3, and the whole surface is coated with an oxide film 7. Windows are built up to the film 7, and an emitter electrode 2 is attached to the region 1, base electrodes 4 to the regions 8 and a collector electrode 6 to the back of the substrate 5 respectively, thus forming a bipolar element with a gate. The diffusion depth of the regions 8 is not uniformalized in this constitution; the depth of one end sections is deep W1 while the depth of the other end sections along the electrodes 4 is shallow W2, and depth is rectangularly decreased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15092779A JPS5673463A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15092779A JPS5673463A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673463A true JPS5673463A (en) | 1981-06-18 |
Family
ID=15507443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15092779A Pending JPS5673463A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673463A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007111147A (en) * | 2005-10-19 | 2007-05-10 | Wayoo Kk | Holder for displaying container |
-
1979
- 1979-11-20 JP JP15092779A patent/JPS5673463A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007111147A (en) * | 2005-10-19 | 2007-05-10 | Wayoo Kk | Holder for displaying container |
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