JPS5673449A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5673449A
JPS5673449A JP15049279A JP15049279A JPS5673449A JP S5673449 A JPS5673449 A JP S5673449A JP 15049279 A JP15049279 A JP 15049279A JP 15049279 A JP15049279 A JP 15049279A JP S5673449 A JPS5673449 A JP S5673449A
Authority
JP
Japan
Prior art keywords
parts
film
thickness
openings
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15049279A
Other languages
Japanese (ja)
Inventor
Toshio Kadowaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15049279A priority Critical patent/JPS5673449A/en
Publication of JPS5673449A publication Critical patent/JPS5673449A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain easily and precisely the wirings of a semiconductor device in accordance with a mask by a method wherein the thickness of the parts of insulating film to be formed the metal wirings on them are made to be thin selectively. CONSTITUTION:Openings are provided selectively in the SiO2 film 2 on an Si substrate incorporating with transistors, and a resist mask 3 having the reversed pattern against the wiring pattern is applied. The film 2 at the circumferences of the openings are etched thinly, and the thickness l1 of the film 2 at the wiring forming parts are made to be thinner than the thickness l0 of the other part. As a result, step parts 5 are formed on the surfaces of the SiO2 2. When Al films 6, 7 are formed, superior discontinuity can be obtained at the discontinuing parts 8. Then the resist 3 is molten off to simplify and to ensure the lifting off and the desired electrode pattern can be obtained.
JP15049279A 1979-11-19 1979-11-19 Semiconductor device Pending JPS5673449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15049279A JPS5673449A (en) 1979-11-19 1979-11-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15049279A JPS5673449A (en) 1979-11-19 1979-11-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5673449A true JPS5673449A (en) 1981-06-18

Family

ID=15498045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15049279A Pending JPS5673449A (en) 1979-11-19 1979-11-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673449A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825229A (en) * 1981-08-08 1983-02-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH01270248A (en) * 1988-04-22 1989-10-27 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825229A (en) * 1981-08-08 1983-02-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH01270248A (en) * 1988-04-22 1989-10-27 Hitachi Ltd Semiconductor device

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