JPS5673449A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5673449A JPS5673449A JP15049279A JP15049279A JPS5673449A JP S5673449 A JPS5673449 A JP S5673449A JP 15049279 A JP15049279 A JP 15049279A JP 15049279 A JP15049279 A JP 15049279A JP S5673449 A JPS5673449 A JP S5673449A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- film
- thickness
- openings
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain easily and precisely the wirings of a semiconductor device in accordance with a mask by a method wherein the thickness of the parts of insulating film to be formed the metal wirings on them are made to be thin selectively. CONSTITUTION:Openings are provided selectively in the SiO2 film 2 on an Si substrate incorporating with transistors, and a resist mask 3 having the reversed pattern against the wiring pattern is applied. The film 2 at the circumferences of the openings are etched thinly, and the thickness l1 of the film 2 at the wiring forming parts are made to be thinner than the thickness l0 of the other part. As a result, step parts 5 are formed on the surfaces of the SiO2 2. When Al films 6, 7 are formed, superior discontinuity can be obtained at the discontinuing parts 8. Then the resist 3 is molten off to simplify and to ensure the lifting off and the desired electrode pattern can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15049279A JPS5673449A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15049279A JPS5673449A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5673449A true JPS5673449A (en) | 1981-06-18 |
Family
ID=15498045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15049279A Pending JPS5673449A (en) | 1979-11-19 | 1979-11-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5673449A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5825229A (en) * | 1981-08-08 | 1983-02-15 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH01270248A (en) * | 1988-04-22 | 1989-10-27 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-11-19 JP JP15049279A patent/JPS5673449A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5825229A (en) * | 1981-08-08 | 1983-02-15 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH01270248A (en) * | 1988-04-22 | 1989-10-27 | Hitachi Ltd | Semiconductor device |
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