JPS5669819A - Manufacture of amorphous silicon hydride layer - Google Patents

Manufacture of amorphous silicon hydride layer

Info

Publication number
JPS5669819A
JPS5669819A JP14622879A JP14622879A JPS5669819A JP S5669819 A JPS5669819 A JP S5669819A JP 14622879 A JP14622879 A JP 14622879A JP 14622879 A JP14622879 A JP 14622879A JP S5669819 A JPS5669819 A JP S5669819A
Authority
JP
Japan
Prior art keywords
silicon
evaporated
substance
melting pot
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14622879A
Other languages
Japanese (ja)
Inventor
Tatsuo Masaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14622879A priority Critical patent/JPS5669819A/en
Publication of JPS5669819A publication Critical patent/JPS5669819A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain the grown-layer having an excellent characteristics by a method wherein a silicon evaporated substance and a silicon layer supporting substance are placed in a bell jar, silicon is evaporated by irradiating an electron beam and the silicon containing hydrogen is deposited on the supporting substance by having the evaporated silicon pass through an activated atmosphere. CONSTITUTION:A melting pot 7 containing silicon evaporating substance, a rotary shutter 9 which will cover the melting pot 7 and an annular glass leading-in tube 5, to be placed above the shutter 9 and having a plurality of small holes, are arranged respectively on the bottom base plate 1 of a glass jar 3 having a decompressable internal depositing chamber 4. Also an electron gun 8 is provided in the vicinity of the melting pot 7, a high frequency coil 10 is placed and above which two rotatable unbrella-typed supporting members 11-1 and 11-2, attached on the lower surface of a radiant ray heating device 12, are provided. With this constitution, an H2, an SiH4 and doping gas are sent in, silicon is evaporated, it is activated by the coil and a noncrystalline silicon layer of about 1mum in thickness can be obtained within the time less than twenty minutes.
JP14622879A 1979-11-12 1979-11-12 Manufacture of amorphous silicon hydride layer Pending JPS5669819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14622879A JPS5669819A (en) 1979-11-12 1979-11-12 Manufacture of amorphous silicon hydride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14622879A JPS5669819A (en) 1979-11-12 1979-11-12 Manufacture of amorphous silicon hydride layer

Publications (1)

Publication Number Publication Date
JPS5669819A true JPS5669819A (en) 1981-06-11

Family

ID=15402998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14622879A Pending JPS5669819A (en) 1979-11-12 1979-11-12 Manufacture of amorphous silicon hydride layer

Country Status (1)

Country Link
JP (1) JPS5669819A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104916A2 (en) * 1982-09-29 1984-04-04 National Research Development Corporation Depositing a film onto a substrate including electron-beam evaporation
JPS6072226A (en) * 1983-08-26 1985-04-24 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of producing amorphous semiconductor alloy
KR100334085B1 (en) * 2000-02-02 2002-04-26 대한민국 (관리청:특허청장, 승계청:서울대학교 신소재 공동연구소장) Two Chambered Chemical Vapor Deposition Apparatus for Producing Quantum Dots

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104916A2 (en) * 1982-09-29 1984-04-04 National Research Development Corporation Depositing a film onto a substrate including electron-beam evaporation
US4698235A (en) * 1982-09-29 1987-10-06 National Research Development Corporation Siting a film onto a substrate including electron-beam evaporation
JPS6072226A (en) * 1983-08-26 1985-04-24 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of producing amorphous semiconductor alloy
KR100334085B1 (en) * 2000-02-02 2002-04-26 대한민국 (관리청:특허청장, 승계청:서울대학교 신소재 공동연구소장) Two Chambered Chemical Vapor Deposition Apparatus for Producing Quantum Dots

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