JPS5666086A - Electrically insulating board - Google Patents

Electrically insulating board

Info

Publication number
JPS5666086A
JPS5666086A JP14205979A JP14205979A JPS5666086A JP S5666086 A JPS5666086 A JP S5666086A JP 14205979 A JP14205979 A JP 14205979A JP 14205979 A JP14205979 A JP 14205979A JP S5666086 A JPS5666086 A JP S5666086A
Authority
JP
Japan
Prior art keywords
electrically insulating
insulating board
board
electrically
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14205979A
Other languages
Japanese (ja)
Other versions
JPS5831755B2 (en
Inventor
Yasuo Matsushita
Yukio Takeda
Kousuke Nakamura
Tokio Oogoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54142059A priority Critical patent/JPS5831755B2/en
Priority to DE8080106791T priority patent/DE3064598D1/en
Priority to EP80106791A priority patent/EP0028802B1/en
Priority to US06/203,554 priority patent/US4370421A/en
Publication of JPS5666086A publication Critical patent/JPS5666086A/en
Priority to US06/450,566 priority patent/US4571610A/en
Publication of JPS5831755B2 publication Critical patent/JPS5831755B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
JP54142059A 1979-11-05 1979-11-05 Base for electrical insulation Expired JPS5831755B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP54142059A JPS5831755B2 (en) 1979-11-05 1979-11-05 Base for electrical insulation
DE8080106791T DE3064598D1 (en) 1979-11-05 1980-11-04 Electrically insulating substrate and a method of making such a substrate
EP80106791A EP0028802B1 (en) 1979-11-05 1980-11-04 Electrically insulating substrate and a method of making such a substrate
US06/203,554 US4370421A (en) 1979-11-05 1980-11-05 Electrically insulating substrate and a method of making such a substrate
US06/450,566 US4571610A (en) 1979-11-05 1982-12-16 Semiconductor device having electrically insulating substrate of SiC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54142059A JPS5831755B2 (en) 1979-11-05 1979-11-05 Base for electrical insulation

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2447382A Division JPS57164550A (en) 1982-02-19 1982-02-19 Electric device with improved heat radiating property
JP57024474A Division JPS57164541A (en) 1982-02-19 1982-02-19 Electric device
JP7740084A Division JPS6084843A (en) 1984-04-16 1984-04-16 Substrate for mounting semiconductor element

Publications (2)

Publication Number Publication Date
JPS5666086A true JPS5666086A (en) 1981-06-04
JPS5831755B2 JPS5831755B2 (en) 1983-07-08

Family

ID=15306454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54142059A Expired JPS5831755B2 (en) 1979-11-05 1979-11-05 Base for electrical insulation

Country Status (1)

Country Link
JP (1) JPS5831755B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164550A (en) * 1982-02-19 1982-10-09 Hitachi Ltd Electric device with improved heat radiating property
JPS57164541A (en) * 1982-02-19 1982-10-09 Hitachi Ltd Electric device
JPS57210648A (en) * 1981-06-19 1982-12-24 Hitachi Ltd Semiconductor device
JPS5851405A (en) * 1981-09-12 1983-03-26 京セラ株式会社 Method of producing electrically insulating silicon carbide sintered material
JPS58101442A (en) * 1981-12-11 1983-06-16 Hitachi Ltd Substrate for electric device
JPS59165447A (en) * 1983-03-11 1984-09-18 Hitachi Ltd Integrated circuit
JPS60189226A (en) * 1984-03-08 1985-09-26 Sharp Corp Coating film
JPH0263546U (en) * 1989-11-01 1990-05-11
JP2004131298A (en) * 2001-08-20 2004-04-30 Ngk Insulators Ltd Low dielectric dissipation material and method of controlling dielectric dissipation factor of silicon carbide sintered compact

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH675800A5 (en) * 1988-04-26 1990-10-31 Asea Brown Boveri

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210648A (en) * 1981-06-19 1982-12-24 Hitachi Ltd Semiconductor device
JPS5851405A (en) * 1981-09-12 1983-03-26 京セラ株式会社 Method of producing electrically insulating silicon carbide sintered material
JPS6312326B2 (en) * 1981-09-12 1988-03-18 Kyosera Kk
JPS58101442A (en) * 1981-12-11 1983-06-16 Hitachi Ltd Substrate for electric device
JPS57164550A (en) * 1982-02-19 1982-10-09 Hitachi Ltd Electric device with improved heat radiating property
JPS57164541A (en) * 1982-02-19 1982-10-09 Hitachi Ltd Electric device
JPS6342414B2 (en) * 1982-02-19 1988-08-23 Hitachi Ltd
JPS59165447A (en) * 1983-03-11 1984-09-18 Hitachi Ltd Integrated circuit
JPS60189226A (en) * 1984-03-08 1985-09-26 Sharp Corp Coating film
JPH0345896B2 (en) * 1984-03-08 1991-07-12 Sharp Kk
JPH0263546U (en) * 1989-11-01 1990-05-11
JP2004131298A (en) * 2001-08-20 2004-04-30 Ngk Insulators Ltd Low dielectric dissipation material and method of controlling dielectric dissipation factor of silicon carbide sintered compact

Also Published As

Publication number Publication date
JPS5831755B2 (en) 1983-07-08

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