JPS5660022A - Processing method and device for semiconductor wafer - Google Patents
Processing method and device for semiconductor waferInfo
- Publication number
- JPS5660022A JPS5660022A JP13616479A JP13616479A JPS5660022A JP S5660022 A JPS5660022 A JP S5660022A JP 13616479 A JP13616479 A JP 13616479A JP 13616479 A JP13616479 A JP 13616479A JP S5660022 A JPS5660022 A JP S5660022A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- reverse side
- abrasive solution
- semiconductor wafer
- soaked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000003672 processing method Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 abstract 7
- 230000000694 effects Effects 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
PURPOSE:To increase the gettering effect and the productivity of the subject semiconductor wafer by a method wherein the reverse side of the wafer is soaked in an abrasive solution and a uniform damaged layer is formed on the reverse side of the wafer while ultrasonic vibrations are being applied. CONSTITUTION:The wafer 2 is sticked to a wafer supporting disk 1 with the reverse side facing outside, it is soaked into an abrasive solution 5 filled in an abrasive solution vessel 4, vibrations are given by an ultrasonic vibration generator 3 and a damaged layer is formed with an excellent reproducibility on the reverse side of the wafer. As a uniform back-distortion processed layer ie formed hereby, a large quantity of wafers can be manufactured simultaneously.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13616479A JPS5660022A (en) | 1979-10-22 | 1979-10-22 | Processing method and device for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13616479A JPS5660022A (en) | 1979-10-22 | 1979-10-22 | Processing method and device for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5660022A true JPS5660022A (en) | 1981-05-23 |
Family
ID=15168811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13616479A Pending JPS5660022A (en) | 1979-10-22 | 1979-10-22 | Processing method and device for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660022A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01143223A (en) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | Surface treatment of semiconductor substrate |
JPH01143224A (en) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | Surface treatment of semiconductor substrate |
US5071776A (en) * | 1987-11-28 | 1991-12-10 | Kabushiki Kaisha Toshiba | Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface |
JP2006303223A (en) * | 2005-04-21 | 2006-11-02 | Disco Abrasive Syst Ltd | Processing method of wafer |
-
1979
- 1979-10-22 JP JP13616479A patent/JPS5660022A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01143223A (en) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | Surface treatment of semiconductor substrate |
JPH01143224A (en) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | Surface treatment of semiconductor substrate |
US4971920A (en) * | 1987-11-28 | 1990-11-20 | Kabushiki Kaisha Toshiba | Gettering method for semiconductor wafers |
US4980300A (en) * | 1987-11-28 | 1990-12-25 | Kabushiki Kaisha Toshiba | Gettering method for a semiconductor wafer |
US5071776A (en) * | 1987-11-28 | 1991-12-10 | Kabushiki Kaisha Toshiba | Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface |
JPH0524661B2 (en) * | 1987-11-28 | 1993-04-08 | Toshiba Kk | |
JP2006303223A (en) * | 2005-04-21 | 2006-11-02 | Disco Abrasive Syst Ltd | Processing method of wafer |
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